TECHNOLOGY AND APPLICATIONS OF SILICON-ON-NOTHING

摘要

Silicon-on-nothing (SON) structure, in which a vacancy layer is formed instead of a buried oxide of silicon-on-insulator (SOI), has been proposed. We have developed an ingenious technique to fabricate SON structure on bulk substrate, which we named as empty-space-in-silicon (ESS) technique. The advantages of this technique are as follows: Partial SO! formation on bulk substrate, low cost, simpk. process and free layout. SON structure and its position can precisely be controlled for the fabrication of MOSFET by the ESS technique. Very simple process sequence for making the double-gate (DG) device fabricated using SON structure is presented, which is compatible with conventional CMOS process. DG MOSFET exhibited high drivabilily compared to the conventional MOSFET.