One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here we show the concept of atomically controlled processing based on atomic-order surface reaction control. The main idea of the atomic layer approach is the separation of the surface adsorption of reactant gases from the reaction process. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Si or SiGe epitaxial growth on N, P or B layer already-formed on Si(lOO) or SiGe(lOO) surface is achieved. Furthermore, electrical characteristics of atomic-layer doped epitaxial films and the capability of atomically controlled processing for doping of advanced devices are demonstrated. These results open the way to atomically controlled CVD technology for ultra-large-scale integrations.
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