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Perspectives for ultra high density nonvolatile data storage

机译:超高密度非易失性数据存储的透视图

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Nonvolatile memories based on charge storage currently dominate the high density data flash market. In the short and medium term, multi-level floating gate in NAND array architecture as well as NROM dual bit feature low cost per bit and simplicity of processing and thus are likely to have largest market share. We review these technologies and discuss scalability issues as well as alternative FinFET type device architectures to overcome roadblocks. Finally, we briefly address emerging memories in particular resistive memories which could replace charge storage based memories on the long run.
机译:基于电荷存储的非易失性存储器目前主导高密度数据闪存市场。在NAND阵列架构中的短期和中期浮栅以及NROM双位特征在每位的低成本以及处理的简单性,因此可能具有最大的市场份额。我们审查这些技术并讨论可扩展性问题以及替代FinFET类型设备架构以克服roadblocks。最后,我们简要地解决了特定的电阻存储器的新出现的存储器,这可以长期取代基于电荷存储的存储器。

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