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SURFACE PREPARATION and CLEANING CHALLENGES FOR sub-65nm PROCESS INTEGRATION

机译:Sub-65nm工艺集成的表面制备和清洁挑战

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摘要

The Semiconductor industry has shown remarkable ingenuity in breaking through virtually all of the technology barriers that have been presented as obstacles to Moore's Law scaling [1]. Many of these barriers have been overcome with major advances in process equipment. One often overlooked technology enabler has been surface preparation and wafer cleaning. Advances in surface preparation have allowed for the deposition of new materials used in gate stacks, interconnects, and DRAM storage electrodes. In addition, surface preparation developments have reduced material losses which are vital to maintaining shrinking critical dimensions (CDs) and film thicknesses. Many of the advances in surface preparation have been realized with a shift from batch processing to single wafer processing.
机译:半导体行业在突破几乎所有技术障碍都展示了卓越的聪明才智,这些屏障被呈现为摩尔法缩放的障碍[1]。这些障碍中的许多人已经克服了工艺设备的主要进步。一个经常被忽视的技术推动器已经进行了表面准备和晶圆清洁。表面制备的进展已经允许沉积栅极堆叠,互连和DRAM存储电极中使用的新材料。此外,表面制备显影具有降低的材料损失,这对于维持缩小尺寸(CD)和膜厚度至关重要。已经实现了从批处理到单晶片处理的偏移的表面准备的许多进展。

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