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Metrology requirements for lithography's next wave

机译:光刻下一波的计量要求

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摘要

Lithographic technology has progressed through a number of "waves," beginning with contact printing and progressing to today's DUV step-and-scan exposure methods. Measurement capabilities have also evolved commensurate with changes in the exposure technology and feature sizes. The greatest measurement challenges today are related to gate CD control requirements, as these have been greatly accelerated during the past 10 years. Scatterometry represents a new method that may help to address this need, but something else is likely required for measurement of line-edge roughness (LER). More direct measurements of parameters such as lens aberrations, are also required. Overlay measurement will also be challenged to meet the needs of future lithographic technologies, and solutions must address the interplay between lens aberrations and overlay errors. Next-generation lithographic technologies will require a host of new metrology capabilities, and the late availability of the means for measurement could delay the introduction of the new technologies.
机译:光刻技术已经通过了许多“波浪”,从接触打印开始,进展到今天的DUV步进和扫描曝光方法。测量功能也在曝光技术和特征尺寸的变化中发展起来。今天最大的衡量挑战与门CD控制要求有关,因为在过去的10年里,这些都会大大加速。散射测定法表示可能有助于解决这种需求的新方法,但是可能需要其他东西来测量线边粗糙度(LER)。还需要更直接地测量诸如镜头像差的参数。覆盖测量也将受到挑战,以满足未来光刻技术的需求,解决方案必须解决镜头像差和覆盖错误之间的相互作用。下一代光刻技术将需要大量的新计量能力,并且测量手段的迟到可用性可能会延迟引入新技术。

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