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Hydrogen-induced Defects in Niobium Studied by Positron Annihilation

机译:通过正电子湮没研究的铌中的氢诱导的缺陷

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Changes of the defect structure of niobium induced by hydrogen loading are presented in this work. It was found that annealing of virgin bulk Nb (99.9%) at 1000°C for 1h leads to a complete recovery of defects. Subsequently, the defect-free samples were step-by-step electrochemically loaded with hydrogen up to X{sub}H = 0.06 [H/Nb atom ratio], i.e. in the a-phase region, where the Nb-H system represents a single-phase solid solution. The evolution of the microstructure with increasing hydrogen concentration was studied by X-ray diffraction and two complementary' techniques of positron annihilation spectroscopy (PAS), namely positron lifetime spectroscopy and slow positron implantation spectroscopy with measurement of Doppler broadening. It was found that new defects were created due to hydrogen loading. The concentration of these hydrogen-induced defects increases with increasing hydrogen concentration. A comparison of PAS results with theoretical calculations revealed that complexes consisting of a vacancy, surrounded likely by four hydrogen atoms, were introduced into the samples due to hydrogen loading.
机译:本工作中提出了氢负载诱导的铌缺陷结构的变化。结果发现,500℃的原始散装Nb(99.9%)退火1H导致完全恢复缺陷。随后,缺血样品被逐步电化学加载到X {Sub} H = 0.06 [H / NB原子比],即在A相区域中,其中NB-H系统表示a单相固溶体。通过X射线衍射和两种互补的正电子湮没光谱(PAS),即正电子延长和慢朗环植入光谱研究,通过X射线衍射和两种互补性浓缩技术的慢性升高和慢朗环升高的慢朗环植入光谱研究。结果发现,由于氢气负荷而产生了新的缺陷。随着氢浓度的增加,这些氢诱导的缺陷的浓度增加。 PAS结果与理论计算的比较显示,由于氢负载引入样品中的空位,围绕着氢原子的空位组成的复合物。

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