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POSITRON-ANNIHILATION STUDIES OF HYDROGEN-INDUCED DEFECTS IN POST-DEFORMATION HYDROGEN-CHARGED POLYCRYSTALLINE COBALT

机译:变形后充氢的多晶硅钴中氢致缺陷的正电子AN没研究

摘要

By means of Doppler broadening lineshape parameter measurement, the hydrogen-induced defects and their recovery behaviour in post-deformation hydrogen-charged polycrystalline Co are studied. The measured activation energy for the migration of monovacanies is 1.09 +/- 0.07 eV.
机译:通过多普勒加宽线形参数测量,研究了变形后充氢多晶Co中氢致缺陷及其恢复行为。测得的单空位迁移的活化能为1.09 +/- 0.07 eV。

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