An improved Monte Carlo algorithm for ionized impurity scattering in bands with warping, non-parabolicity and degeneracy

摘要

Hole scattering with ionized impurities in semiconductors is investigated within the framework of effective mass theory and the Brooks-Herrings formalism. The present work proposes an efficient technique for calculating the final state after a scattering, valid even when the anisotropy, non-parabolicity and degeneracy of the valence band are taken into consideration.