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International Workshop on Computational Electronics
International Workshop on Computational Electronics
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1.
Comprehensive simulation of vertical cavity surface emitting lasers
机译:
垂直腔表面发射激光器的综合模拟
作者:
Witzigmann B.
;
Streiff M.
;
Odermatt S.
;
Luisier M.
;
Laino V.
;
Witzig A.
;
Vez D.
;
Royo P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
surface emitting lasers;
circuit simulation;
vertical cavity surface emitting lasers;
LASER-DESSIS;
improved many-body gain model;
comprehensive simulation;
2.
Modeling of transport through semiconductor quantum dots: an approach based on the direct solution of the coupled Poisson-Boltzmann equations
机译:
通过半导体量子点的运输建模:一种基于耦合泊松 - Boltzmann方程的直接解决方案的方法
作者:
Csontos D.
;
Ulloa S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum dots;
transport processes;
Boltzmann equation;
Poisson equation;
electric fields;
finite difference methods;
transport modeling;
semiconductor quantum dots;
coupled Poisson-Boltzmann equations;
self-consistent solution;
steady-state Boltzmann transport equation;
inhomogeneous transport;
nonlinear coupled Poisson-Boltzmann system;
finite difference methods;
high-field transport characteristics;
high-temperature transport characteristics;
charge redistribution;
electron distribution function;
3.
A Legendre polynomial solver for the Langevin Boltzmann equation
机译:
Langevin Boltzmann方程的Legendre多项式求解器
作者:
Jungemann C.
;
Meinerzhagen B.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
technology CAD (electronics);
semiconductor device noise;
Legendre polynomials;
Boltzmann equation;
frequency-domain analysis;
Legendre polynomial solver;
Langevin Boltzmann equation;
noise simulation;
Monte Carlo method;
time-domain based method;
frequency domain method;
LBE numerical solver;
Legendre polynomial expansion;
MC simulation;
4.
Hierarchical multiscale computations of ion transport in synthetic nanopores
机译:
合成纳米孔中离子输送的分层多尺度计算
作者:
Joseph S.
;
Chatterjee A.N.
;
Aluru N.R.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
ionic conductivity;
molecular dynamics method;
self-diffusion;
nanostructured materials;
ion mobility;
density functional theory;
silicon compounds;
hierarchical multiscale computation;
ion transport computations;
synthetic nanopores;
two level multiscale simulations;
continuum Poisson Nernst Planck theory;
molecular dynamics simulation;
current-voltage characteristics;
silicon dioxide membrane;
ion conductivity;
ion self diffusion;
nanopore confinement;
diffusion coefficient;
SiO/sub 2/ nanopores;
KCl solution;
NaCl solution;
semiempirical AMI;
transport coefficient;
5 nm;
3 nm;
2 nm;
1.2 nm;
SiO/sub 2/;
KCl;
NaCl;
5.
Effective mass approach for n-MOSFETs on arbitrarily oriented wafers
机译:
任意导向晶圆上的N-MOSFET的有效群发方法
作者:
Rahman A.
;
Lundstrom A.
;
Ghosh A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
transport processes;
wafer-scale integration;
electronic engineering computing;
electrostatic discharge;
silicon;
germanium compounds;
elemental semiconductors;
n-MOSFET;
arbitrarily oriented wafers;
mass equation approach;
electrostatic potential;
dipolar coupling;
Zener tunneling;
constant energy ellipsoid;
Si;
Ge;
6.
Monte-Carlo simulation of carbon nanotube devices
机译:
碳纳米管器件的Monte-Carlo仿真
作者:
Hasan S.
;
Jing Guo
;
Vaidyanathan M.
;
Alam M.A.
;
Lundstrom M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
carbon nanotubes;
Monte Carlo methods;
electron mobility;
electron transport theory;
semiconductor device models;
Monte-Carlo simulation;
carbon nanotube devices;
coaxially gated geometry;
7.
Electronic structure and optical transitions in InAsSb/InGaAs quantum dots
机译:
INASSB / INGAAS量子点中的电子结构和光学过渡
作者:
von Allmen P.
;
Seungwon Lee
;
Oyafuso F.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum dots;
III-V semiconductors;
photoluminescence;
energy gap;
excitons;
indium compounds;
self-assembly;
electronic structure;
optical transitions;
self-assembled quantum dots;
optical detectors;
photoluminescence;
energy band gap;
biaxial strain;
long wavelength optical devices;
electronic confinement;
relaxed atomic positions;
elastic energy;
valence force field description;
inter-atomic interaction;
exciton energy;
oscillator strength;
Sb concentration;
37 nm;
InAsSb-InGaAs;
8.
Tunable optical properties of colloidal quantum dots in electrolytic environments
机译:
电解环境中胶体量子点的可调光学性质
作者:
Stroscio M.A.
;
Dutta M.
;
Ramadurai D.
;
Kohanpour B.
;
Alexson D.
;
Peng Shi
;
Sethuraman A.
;
Yang Li
;
Saini V.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum dots;
colloidal crystals;
wide band gap semiconductors;
spectra;
electrolytes;
Fermi level;
II-VI semiconductors;
cadmium compounds;
molecular electronics;
tunable optical properties;
colloidal quantum dots;
electrolytic environments;
absorption spectra;
electrolytic solutions;
electrolyte concentration;
absorption threshold;
electrolytic screening;
intrinsic spontaneous polarization;
wurtzite quantum dots;
electrolyte-dependent absorption properties;
Fermi-level tuning;
carbon nanotubes;
high density networks;
biomolecular links;
CdS;
9.
Simulation of entanglement dynamics for a scattering between a free and a bound carrier in a quantum wire
机译:
Quantum Wire中的自由和边界载波之间散射动力学的刺痛
作者:
Bordone P.
;
Bertoni A.
;
Jacoboni C.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
quantum entanglement;
semiconductor quantum wires;
Schrodinger equation;
harmonic oscillators;
electric potential;
wave functions;
electronic engineering computing;
entanglement dynamics simulation;
electron scattering;
free carrier;
bound carrier;
quantum wire;
numerical analysis;
quantum entanglement;
electron propagation;
charged particle;
harmonic potential;
ionized impurity;
localized phonon;
free electron;
screened Coulomb potential;
time-dependent Schrodinger equation;
two-particle wave function;
bipartite system;
minimum uncertainty wave packet;
ground state;
10.
Intrinsic parameter fluctuations in conventional MOSFETs at the scaling limit: a statistical study
机译:
在缩放限制的传统MOSFET中的内在参数波动:统计研究
作者:
Adamu-Lema F.
;
Roy G.
;
Brown A.R.
;
Asenov A.
;
Roy S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
semiconductor device models;
doping profiles;
nanoelectronics;
intrinsic parameter fluctuations;
scaling limit;
MOSFET device;
atomistic device simulator;
doping profile;
simulated I/sub D/-V/sub G/ characteristics;
doping concentrations;
short channel control;
35 nm;
25 nm;
18 nm;
11.
Accurate deterministic numerical simulation of p-n junctions
机译:
P-N结的准确确定性数值模拟
作者:
Godoy A.
;
Gonzales P.
;
Carillo J.A.
;
Gamiz F.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
p-n junctions;
semiconductor device models;
finite difference methods;
Boltzmann equation;
Poisson equation;
phonons;
electron-hole recombination;
deterministic numerical simulation;
p-n junction simulation;
Boltzmann equation;
bipolar carrier device simulation;
FD-WENO scheme;
finite differences weighted essentially nonoscillatory;
transport equation;
majority carrier;
space charge region;
Poisson equation;
acoustic phonons;
elastic approximation;
optical nonpolar phonons;
direct generation-recombination;
indirect generation-recombination;
12.
Numerical parallel algorithms for large-scale nanoelectronics simulations using NESSIE
机译:
使用Nessie的大规模纳米电子模拟的数值并行算法
作者:
Polizzi E.
;
Sameh A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
parallel algorithms;
nanoelectronics;
linear systems;
iterative methods;
numerical parallel algorithms;
nanoelectronics simulations;
NESSIE;
linear systems;
uniprocessor;
Krylov subspace iterative method;
electron density;
Linux cluster;
MPI directives;
local memory;
linear solver SPIKE;
ScaLAPACK;
parallel trace-minimization algorithm;
LAPACK schemes;
eigenpairs;
13.
From wave-functions to current-voltage characteristics in silicon single-nanocrystal Coulomb blockade devices
机译:
从波函数到硅单纳米晶体库仑封锁装置的电流 - 电压特性
作者:
See J.
;
Dollfus P.
;
Galdin S.
;
Hesto P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MIS structures;
semiconductor quantum dots;
Coulomb blockade;
elemental semiconductors;
silicon;
wave-functions;
current-voltage characteristics;
silicon single-nanocrystal Coulomb blockade devices;
silicon microelectronics;
semiconductor single-electron devices;
electric charge granularity;
Coulomb blockade phenomenon;
CMOS circuits;
elementary metal-insulator-silicon quantum dot-insulator-metal;
MIS/IM structures;
electronic structure;
Si nanocrystal;
Hartree method;
tunneling transfer rates;
Monte-Carlo technique;
bias voltage;
quantum dot;
tunnel barriers;
Si;
14.
Evolution of current transport models for engineering applications
机译:
工程应用流动模型的演变
作者:
Gehring A.
;
Selberherr S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
technology CAD (electronics);
Schrodinger equation;
Poisson equation;
Monte Carlo methods;
transport processes;
Wigner distribution;
transport model;
engineering applications;
device modeling tools;
quantum-mechanical modeling approach;
macroscopic device simulators;
Wigner equation;
density-gradient model;
self-consistently couple Schrodinger-Poisson solvers;
Wigner Monte Carlo method;
quantum correction;
15.
Full-band particle-based analysis of device scaling for 3D tri-gate FETs
机译:
用于3D三栅FET的设备缩放的全带粒子分析
作者:
Chinev P.
;
Branlard J.
;
Saranitiand M.
;
Aboud S.
;
Goodnick S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
field effect transistors;
silicon-on-insulator;
circuit simulation;
full-band particle-based analysis;
device scaling;
3D tri-gate FET;
wrap around gate geometry;
device scalability;
planar device structures;
short channel effects;
electric field shielding;
improved gate-channel controllability;
16.
Modeling of quantum nanomechanics
机译:
量子纳米力学建模
作者:
Jauho A.-T.
;
Novotny T.
;
Donarini A.
;
Flindt C.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
micromechanical devices;
quantum theory;
nanoelectronics;
Liouville equation;
transport processes;
tunnelling;
semiconductor device models;
quantum nanomechanics;
microelectromechanical systems;
mechanical motion;
quantum mechanical;
shuttle transition;
IV-curve;
diagnostic tool;
microscopic transport mechanisms;
generalized master equation;
density matrix;
Liouville equation;
bath degrees of freedom;
free fermions;
electronic contacts;
17.
A self-consistent event biasing scheme for statistical enhancement
机译:
统计增强的自我一致事件偏置方案
作者:
Nedjalkov M.
;
Ahmed S.
;
Vasileska D.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
Monte Carlo methods;
Boltzmann equation;
statistical analysis;
boundary-value problems;
tunnelling;
doping profiles;
self-consistent event biasing scheme;
statistical enhancement;
enhancement algorithms;
device behavior;
transport process;
device operation;
discrete dopant distribution;
tunneling phenomena;
Monte Carlo device simulators;
population control technique;
particle splitting;
phase space region;
Boltzmann carriers;
Boltzmann distribution;
stationary transport;
boundary conditions;
particle evolution;
linear Boltzmann equation;
Coulomb interactions;
18.
A computational intelligent optical proximity correction for process distortion compensation of layout mask in subwavelength era
机译:
子波长时代布局掩模处理失真补偿的计算智能光学邻近校正
作者:
Shao-Ming Yu
;
Yiming Li
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
circuit layout;
circuit complexity;
masks;
submillimetre waves;
proximity effect (lithography);
genetic algorithms;
electronic engineering computing;
computational intelligent optical proximity correction;
process distortion compensation;
layout mask;
subwavelength era;
genetic algorithm;
rule-based technique;
conventional model-based correction method;
mask correction;
lithography simulator;
19.
Electro-chemical modeling challenges of biological ion pumps
机译:
生物离子泵电化学建模挑战
作者:
Rakowski R.F.
;
Kaya S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
ion pumps;
electrochemical analysis;
molecular dynamics method;
Poisson equation;
channelling;
free energy;
biomembrane transport;
electrochemical modeling;
biological ion pumps;
ion movement;
biological membranes;
ion channels;
electrochemical gradients;
ion transporters;
permeation;
channel opening;
channel closing;
K/sup +/-selective channels;
atomic resolution structures;
bacterial K/sup +/ channel;
atomic structure;
transport modeling;
Poisson-Nernst-Planck electrodiffusion;
Brownian dynamic simulations;
protein structure;
channel gating;
molecular dynamic simulations;
intermediate conformations;
ion-motive ATPase;
free energy change;
ATP hydrolysis;
actively transported substance;
biological molecules;
Na/sup +/-K/sup +/ ATPase;
K;
Na;
20.
Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling
机译:
纳米级半导体器件的3D模拟的代码,包括1D和2D子带中的漂移扩散和弹道传输,以及3D隧道
作者:
Fiori G.
;
Iannaccone G.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
gallium arsenide;
III-V semiconductors;
semiconductor device models;
nanoelectronics;
tunnelling;
Schrodinger equation;
Poisson equation;
density functional theory;
ballistic transport;
nanowires;
MOSFET;
semiconductor heterojunctions;
electronic engineering computing;
circuit simulation;
3D simulation;
nanoscale semiconductor devices;
drift-diffusion;
ballistic transport;
1D subband;
2D subband;
3D tunneling;
device modeling;
quantum confinement;
MOSFET;
self-consistent solution;
many particle Schrodinger equation;
density functional theory;
nonlinear Poisson equation;
continuity equation;
electrons;
holes;
single electron transistor;
split gates;
AlGaAs heterostructure;
GaAs heterostructure;
silicon nanowire transistor;
GaAs;
AlGaAs;
21.
A simulative method for the analysis of conduction properties of ion channels based on first-principle approaches
机译:
基于第一原理方法分析离子通道的传导性能的模拟方法
作者:
Affinito F.
;
Bigiani A.
;
Brunetti R.
;
Carloni P.
;
Jacoboni C.
;
Piccinini E.
;
Rudan M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
biomembrane transport;
ionic conductivity;
Monte Carlo methods;
ab initio calculations;
conduction properties;
first-principle approach;
selective ion channels;
Monte Carlo simulation;
multi-ion model;
ion binding sites;
atomic structure;
ab-initio MD simulation;
22.
Single electron transport and entanglement induced by surface acoustic waves versus free ballistic propagation in coupled quantum wires
机译:
由耦合量子电线的表面声波对表面声波诱导的单电子传输和缠结
作者:
Rosini M.
;
Bertoni A.
;
Bordone P.
;
Jacoboni C.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
nanoelectronics;
quantum entanglement;
surface acoustic waves;
acoustoelectric effects;
quantum wires;
quantum computing;
semiconductor quantum dots;
semiconductor device models;
wave functions;
single electron transport;
electron entanglement;
surface acoustic waves;
free ballistic propagation;
coupled quantum wires;
single-electron dynamics;
nanodevices;
quantum computing;
free electron propagation;
electron injection;
electron wavefunction;
moving quantum dot;
wire barriers;
phonon decohering effects;
time-dependent SAW potential;
time-dependent simulations;
single-particle/two-dimensions;
two one-dimensional particles;
23.
Treatment of point defects in nanowire MOSFETs using the nonequilibrium Green's function formalism
机译:
非Quiribium函数形式主义的纳米尺寸MOSFET中点缺陷的处理
作者:
Bescond M.
;
Autran J.-L.
;
Cavassilas N.
;
Munteanu D.
;
Lannoo M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
nanowires;
point defects;
Green's function methods;
Poisson equation;
Schrodinger equation;
ballistic transport;
nanowire MOSFET;
nonequilibrium Green's function formalism;
point defect treatment;
3D Poisson equation;
Schrodinger equation;
mode-space representation;
ballistic transport;
tight-binding theory;
first-neighbor-interactions;
ellipsoidal energy band approximation;
electronic transport;
24.
Smart dust: Monte Carlo simulation of self-organised transport
机译:
智能粉尘:蒙特卡罗仿真的自组织运输
作者:
Barker J.
;
Barmpoutis A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
wireless sensor networks;
nanopositioning;
Monte Carlo methods;
circuit complexity;
electronic engineering computing;
network topology;
network synthesis;
circuit simulation;
Smart dust;
Monte Carlo simulation;
self-organised transport;
millimeter scale autonomous systems;
distributed wireless sensor networks;
dust motes;
mechanical complexity;
electronic complexity;
25.
A physically-based analytic model for stress-induced hole mobility enhancement
机译:
一种物理基于基于的应力诱导空穴移动性的分析模型
作者:
Obradovic B.
;
Matagne P.
;
Shifren L.
;
Wang X.
;
Stettler M.
;
He J.
;
Giles M.D.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
hole mobility;
physically-based analytic model;
stress-induced hole mobility enhancement;
computationally efficient model;
stress-modulated hole mobility;
continuum transport simulators;
bandstructure modulation;
wafer bending experiments;
transverse stress;
26.
Electronic transport in discotic liquid crystal columns
机译:
盘式液晶柱中的电子传输
作者:
Lever L.
;
Bushby R.J.
;
Kelsall R.W.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
discotic liquid crystals;
hole mobility;
phonon-phonon interactions;
vacancies (crystal);
dislocations;
Monte Carlo methods;
molecular electronics;
electronic transport;
discotic liquid crystal columns;
discotic molecular columns;
hopping transport;
hole mobilities;
complementary triphenylene species;
highly ordered discotic columns;
weak temperature dependence;
band transport;
Monte Carlo simulation;
hole transport;
1D periodic array;
vacancies;
dislocations;
material disorder;
stochastic distribution;
coherence lengths;
phonon scattering;
out-of-plane vibrations;
carbon-hydrogen bonds;
aromatic core;
27.
Local discontinuous Galerkin methods for moment models in device simulations: formulation and one dimensional results
机译:
局部不连续的Galerkin方法在设备模拟中的时刻模型:配方和一维结果
作者:
Yunxian Liu
;
Chi-Wang Shu
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
Galerkin method;
finite element analysis;
method of moments;
local discontinuous Galerkin methods;
finite element method;
various time dependent moment models;
steady state moment models;
semiconductor device simulations;
heat conduction;
potential equation;
electrical field;
energy transport models;
quantum drift-diffusion;
quantum hydrodynamic models;
kinetic models;
spatial derivatives;
k-p adaptivity;
28.
Self-consistent contact block reduction method for ballistic nanodevices
机译:
弹道纳米型的自洽接触块减少方法
作者:
Sabathil M.
;
Mamaluv D.
;
Vogl P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
ballistic transport;
quantum interference phenomena;
quantum theory;
Green's function methods;
contact block reduction method;
ballistic nanodevices;
open devices;
charge density;
open system;
eigenstates;
closed system;
29.
3D Monte Carlo analysis of discrete dopant effects on electron noise in Si devices
机译:
3D蒙特卡罗对SI器件电子噪声的离散掺杂作用分析
作者:
Dollfus P.
;
Velazquez J.E.
;
Bourne A.
;
Galdin-Retailleau S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
semiconductor device models;
semiconductor device noise;
Monte Carlo methods;
thermal noise;
doping profiles;
impurity distribution;
elemental semiconductors;
silicon;
3D Monte Carlo analysis;
discrete dopant effects;
electron noise;
Si devices;
thermal noise;
atomistic model;
continuum model;
electron-impurity interaction;
discrete impurities;
electron mobility;
Si resistors;
average doping concentration;
impurity position;
MOSFET channel;
50 nm;
Si;
30.
3d Monte Carlo simulation of FinFET using FMM algorithm
机译:
FMM算法的3D Monte Carlo仿真FinFET
作者:
Khan H.R.
;
Vasileska D.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
field effect transistors;
Monte Carlo methods;
3D Monte Carlo simulation;
FinFET;
FMM algorithm;
double-gate MOSFET;
quantization effects;
Coulomb interaction;
31.
Modeling of the electrostatic (plasmon) resonances in metallic and semiconductor nanoparticles
机译:
金属和半导体纳米粒子中静电(近代)共振的建模
作者:
Mayergoyz I.D.
;
Zhenyu Zhang
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
surface plasmon resonance;
nanoparticles;
permittivity;
dispersion relations;
electrostatics;
molecular electronics;
semiconductor device models;
electrostatic plasmon resonance modeling;
metallic nanoparticles;
semiconductor nanoparticles;
resonant behavior;
object permittivity;
free-space wavelength;
trial-and-error method;
dielectric permittivities;
electromagnetic radiation;
resonance frequencies;
3D nanoparticles;
eigenvalues;
boundary integral equation;
resonance permittivity;
dispersion relations;
dielectric object shapes;
object dimensions;
32.
Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation
机译:
基于量子Boltzmann方程的Monte Carlo方法模拟Si和Ge UTB MOSFET
作者:
Gang Du
;
Xiaoyan Liu
;
Zhiliang Xia
;
Ruqi Han
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
Monte Carlo methods;
Boltzmann equation;
silicon;
germanium;
quantum computing;
UTB MOSFET;
Monte Carlo method;
quantum Boltzmann equation;
quantum potential;
collision broadening;
Si;
Ge;
33.
Random doping fluctuations of small-signal parameters in nanoscale semiconductor devices
机译:
纳米级半导体器件中小信号参数的随机掺杂波动
作者:
Andrei P.
;
Mayergoyz I.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor doping;
Boltzmann equation;
fluctuations;
semiconductor device models;
Jacobian matrices;
transport processes;
electric admittance;
random doping fluctuations;
small-signal parameters;
nanoscale semiconductor devices;
transconductance;
gate capacitance;
admittance matrix parameters;
transport equations;
second-order derivatives;
Jacobian matrix;
first-order derivatives;
device simulators;
34.
A high order local solver for Wigner equation
机译:
Wigner方程的高阶本地求解器
作者:
Jing Shi
;
Gamba I.M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
quantum interference phenomena;
semiconductor device models;
boundary-value problems;
Green's function methods;
Schrodinger equation;
nanoelectronics;
high order local solver;
Wigner equation;
nanoscale heterogeneous structure modeling;
quantum effects;
density matrix;
nonequilibrium Green function;
phase space Wigner formalism;
time dependent dynamics;
deterministic solver;
high order numerical discretization;
spurious numerical dissipation;
numerical dispersion;
semiclassical boundary condition;
Wigner integral kernel;
quantum interference;
Schrodinger simulation;
35.
Error analysis of the Poisson P/sup 3/M force field scheme for particle-based simulations of biological systems
机译:
基于粒子仿真模拟的泊松P / SUP 3 / M力场方案的误差分析
作者:
Marreiro D.
;
Aboud S.
;
Saraniti M.
;
Eisenberg R.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
molecular biophysics;
physiological models;
Poisson equation;
stochastic processes;
electrostatics;
error analysis;
finite difference methods;
differential equations;
van der Waals forces;
electrolytes;
error analysis;
Poisson P/sup 3/M force field;
particle-based simulations;
biological systems;
particle-particle-particle-mesh;
electrostatic interactions;
biological system simulation;
particle-mesh;
nonperiodic boundary conditions;
real space P/sup 3/M method;
36.
Manipulating of resonances in conductance of an electron waveguide with antidots
机译:
用防辐射测量电子波导电导的共振
作者:
Satanin A.M.
;
Joel Y.S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum dots;
electron waveguides;
bound states;
electric admittance;
resonance manipulation;
electron waveguide;
antidots;
narrow group state interference;
scattering amplitude;
repulsive potentials;
decaying states;
quasibound states;
background second-subband;
resonant group states;
Fano resonance;
coupling parameter;
degenerate states;
degenerate resonances;
conductance resonances;
37.
Silicon-germanium structure in surrounding-gate strained silicon nanowire FETs
机译:
周围栅极应变硅纳米线FET的硅 - 锗结构
作者:
Jam-Wam Lee
;
Yiming Lee
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
field effect transistors;
nanowires;
semiconductor device models;
Ge-Si alloys;
silicon-germanium structure;
surrounding-gate strained silicon nanowire FET;
double-gate strained silicon field effect transistors;
strained silicon devices;
3D nanodevice simulator;
SiGe;
38.
A coupled 3-D PNP/ECP model for ion transport in biological ion channels
机译:
用于生物离子通道中的离子输送的耦合3-D PNP / ECP模型
作者:
Zhicheng Yang
;
van der Straaten T.A.
;
Ravaioli U.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
biomembrane transport;
chemical potential;
density functional theory;
carrier density;
Newton method;
coupled 3D PNP-ECP model;
ion transport;
biological ion channels;
Poisson-Nernst-Planck theory;
drift-diffusion theory;
macroscopic current;
ion density;
entropic effects;
finite-sized ions;
water molecules;
nonsingular charge distribution;
electrochemical potential;
excess chemical potential;
3D PNP solver;
computational platform PROPHET;
local charge carrier;
water density;
density functional theory;
electrostatic potential;
decoupled feedback method;
Newton method;
charge carrier density;
ECP equations;
PNP equations;
39.
A high order local solver for Wigner equation
机译:
Wigner方程的高阶本地求解器
作者:
Jing Shi
;
Gamba I.M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
quantum interference phenomena;
semiconductor device models;
boundary-value problems;
Green's function methods;
Schrodinger equation;
nanoelectronics;
high order local solver;
Wigner equation;
nanoscale heterogeneous structure modeling;
quantum effects;
density matrix;
nonequilibrium Green function;
phase space Wigner formalism;
time dependent dynamics;
deterministic solver;
high order numerical discretization;
spurious numerical dissipation;
numerical dispersion;
semiclassical boundary condition;
Wigner integral kernel;
quantum interference;
Schrodinger simulation;
40.
Numerical investigation of a molecular switch based on conformational change, with the inclusion of contacts
机译:
基于构象变化的分子交换机的数值研究,包括触点
作者:
Girlanda M.
;
Cacelli I.
;
Ferretti A.
;
Macucci M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
molecular electronics;
density functional theory;
electric fields;
electric field effects;
switching;
molecular switch;
conformational change;
single-molecule devices;
electronic circuits;
molecular-scale electronics;
three-terminal devices;
CMOS technology;
molecular conductance;
field-effect transistors;
mechanical deformation;
transverse electric field;
intramolecular barriers;
molecule conduction state;
41.
The NEGF method: capabilities and challenges
机译:
negf方法:能力和挑战
作者:
Datta S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
Green's function methods;
semiconductor device models;
quantum theory;
carrier mobility;
quantum wires;
NEGF method;
semiconductor nanowires;
carbon nanotubes;
molecular wires;
nanoscale quantum transport;
metallurgical contacts;
phonons;
contact-like entities;
42.
Atomistic treatment of nanotube-metal interfaces
机译:
纳米管 - 金属界面的原子处理
作者:
Kienle D.
;
Ghosh A.
;
Lundstrom M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
transport processes;
interface states;
band structure;
work function;
quantum wires;
quantum dots;
Green's function methods;
Poisson equation;
nanotube devices;
atomistic treatment;
nanotube-metal interfaces;
silicon-based devices;
atomistic dimensions;
post-CMOS devices;
quantum wire;
quantum dot;
electronic structure calculations;
metal bandstructures;
surface physics calculations;
geometry states;
surface states;
relaxed metal-nanotube interfaces;
quantum chemical codes;
tube atoms;
metal atoms;
electrostatic codes;
charge rearrangement;
potential rearrangement;
workfunction difference;
quantum transport calculations;
nonequilibrium transport;
atomistic code;
nonequilibrium Green function;
device bandstructure modeling;
Hamiltonian potential;
self-consistent electrostatic potential;
Poisson equation;
tube levels;
self-energy matrices;
43.
Quantum capacitance effects in carbon nanotube field-effect devices
机译:
碳纳米管场效应装置中的量子电容效应
作者:
Latessa L.
;
Pecchia A.
;
Di Carlo A.
;
Lugli P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
quantum theory;
carbon nanotubes;
field effect transistors;
ab initio calculations;
Green's function methods;
MOSFET circuits;
capacitance;
quantum capacitance effects;
carbon nanotube field-effect devices;
quantum transport;
quantum technology;
organic conductors;
nanometric channel;
electron transmission;
gate potential;
FET devices;
coherent transport properties;
ab-initio approach;
density-functional tight-binding method;
nonequilibrium Green function formalism;
44.
Error analysis of the Poisson P/sup 3/M force field scheme for particle-based simulations of biological systems
机译:
基于粒子仿真模拟的泊松P / SUP 3 / M力场方案的误差分析
作者:
Marreiro D.
;
Aboud S.
;
Saraniti M.
;
Eisenberg R.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
molecular biophysics;
physiological models;
Poisson equation;
stochastic processes;
electrostatics;
error analysis;
finite difference methods;
differential equations;
van der Waals forces;
electrolytes;
error analysis;
Poisson P/sup 3/M force field;
particle-based simulations;
biological systems;
particle-particle-particle-mesh;
electrostatic interactions;
biological system simulation;
particle-mesh;
nonperiodic boundary conditions;
real space P/sup 3/M method;
45.
Modeling of quantum nanomechanics
机译:
量子纳米力学建模
作者:
Jauho A.-T.
;
Novotny T.
;
Donarini A.
;
Flindt C.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
micromechanical devices;
quantum theory;
nanoelectronics;
Liouville equation;
transport processes;
tunnelling;
semiconductor device models;
quantum nanomechanics;
microelectromechanical systems;
mechanical motion;
quantum mechanical;
shuttle transition;
IV-curve;
diagnostic tool;
microscopic transport mechanisms;
generalized master equation;
density matrix;
Liouville equation;
bath degrees of freedom;
free fermions;
electronic contacts;
46.
Tracking the propagation of individual ions through ion channels with nano-MOSFETs
机译:
跟踪各个离子与纳米MOSFET的离子通道的传播
作者:
Millar C.
;
Asenov A.
;
Brown A.R.
;
Roy S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
MOSFET;
electron transport theory;
nanoelectronics;
numerical analysis;
diffusion;
ion propagation;
ion channels;
nanoMOSFET;
drift-diffusion numerical simulations;
close proximity;
ion permeation;
semiconductor device simulation;
transport parameters;
electronic transport;
transistor;
ion transport;
47.
Numerical simulation for direct tunneling current in poly-Si-gate MOS capacitors
机译:
多Si栅极MOS电容器直接隧道电流的数值模拟
作者:
Okamoto M.
;
Mori N.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOS capacitors;
tunnelling;
field effect devices;
nanoelectronics;
MOSFET;
semiconductor device models;
Schrodinger equation;
Poisson equation;
numerical analysis;
numerical simulation;
direct tunneling current;
polySi-gate MOS capacitors;
gate-oxide thickness;
MOSFET;
channel length;
gate current;
electron tunneling;
quantum effects;
tunneling transition rate;
standoff distance;
quantum confinement;
channel region;
polySi-gate devices;
gate region depletion-layer;
Gamow formulation;
electron escape;
Gamow method;
Schrodinger-Poisson solver;
confined states;
48.
The effective conduction-band edge method of quantum correction to the Monte Carlo device simulation
机译:
蒙特卡罗设备仿真量子校正的有效传导边缘方法
作者:
Bo Wu
;
Ting-wei Tang
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
Monte Carlo methods;
conduction bands;
logic gates;
conduction-band edge method;
quantum correction;
Monte Carlo device simulation;
ultra-thin double gate MOSFET;
49.
TCAD process/device modeling challenges and opportunities for the next decade
机译:
TCAD过程/设备建模下一年的挑战和机遇
作者:
Giles M.D.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
technology CAD (electronics);
semiconductor device models;
device modeling;
technology CAD process;
device simulation tools;
50.
Numerical investigation of a molecular switch based on conformational change, with the inclusion of contacts
机译:
基于构象变化的分子交换机的数值研究,包括触点
作者:
Girlanda M.
;
Cacelli I.
;
Ferretti A.
;
Macucci M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
molecular electronics;
density functional theory;
electric fields;
electric field effects;
switching;
molecular switch;
conformational change;
single-molecule devices;
electronic circuits;
molecular-scale electronics;
three-terminal devices;
CMOS technology;
molecular conductance;
field-effect transistors;
mechanical deformation;
transverse electric field;
intramolecular barriers;
molecule conduction state;
51.
Simulation and optimization of spin-orbit quantum dot circuit with integrated quantum point contact read-out
机译:
集成量子点联系人旋转轨道量子点电路的仿真与优化读数
作者:
Lingxiao Zhang
;
Melkinov D.
;
Leburton J.-P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
quantum dots;
spin-orbit interactions;
quantum point contacts;
readout electronics;
electron density;
circuit simulation;
Poisson equation;
density functional theory;
Thomas-Fermi model;
circuit optimisation;
quantum gates;
circuit simulation;
circuit optimization;
spin-orbit quantum dot circuit;
integrated quantum point contact;
computer simulation;
laterally coupled quantum dot circuit;
charge read-out;
electron density;
3D Poisson equations;
3D Kohn-Sham equations;
local spin density approximation;
Thomas-Fermi approximation;
charge density;
differential equations;
nonuniform 3D mesh;
doping profiles;
electronic states;
eigenenergy spectra;
LCQD confinement;
external gate bias;
Slater rule;
detector sensitivity;
QPC gate geometry;
electron charging;
potential energy saddle point;
Buttiker formula;
52.
A novel approach to compact model parameter extraction for excimer laser annealed complementary thin film transistors
机译:
准分子激光退火互补薄膜晶体管紧凑型型号参数提取的新方法
作者:
Yiming Li
;
Shao-Ming Yu
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
thin film transistors;
laser beam annealing;
excimer lasers;
circuit simulation;
semiconductor device models;
model parameter extraction;
excimer laser annealing;
complementary thin film transistors;
RPI model;
transconductance;
output conductance;
RPI TFT models;
circuit simulation;
53.
Theoretical evidence of spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures
机译:
GaAs / Algaas分裂栅异质结构中自发自旋极化的理论证据
作者:
Ashok A.
;
Akis R.
;
Vasileska D.
;
Ferry D.K.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
quantum wells;
magnetoelectronics;
spin polarised transport;
two-dimensional electron gas;
density functional theory;
III-V semiconductors;
gallium arsenide;
aluminium compounds;
quantum point contacts;
spontaneous spin polarization;
split-gate heterostructures;
spintronics;
spin degree of freedom;
high density memories;
nonvolatile reprogrammable logic;
quantum computing;
carrier injection;
carrier transport;
carrier detection;
spin polarized carriers;
device heterostructures;
conductance measurements;
quantum point contacts;
lateral confinement;
high mobility 2D electron gas;
modulation doped heterostructure;
spin-polarized density functional theory;
quantum wells;
GaAs-AlGaAs;
54.
An application of Shockley's recombination and generation theory to biological ion channels
机译:
震撼重组和发电理论在生物离子通道中的应用
作者:
Sai Hu
;
Hess K.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
minority carriers;
biomembrane transport;
electron-hole recombination;
electron traps;
charge carrier recombination theory;
biological ion channels;
Shockley-Read-Hall model;
microscopic particle methods;
macroscopic continuum models;
ion trapping process;
ion releasing process;
trapping sites;
binding sites;
55.
Strain-dependent hole masses and piezoresistive properties of silicon
机译:
硅的应变依赖孔肿块和压阻性能
作者:
Matsuda K.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
elemental semiconductors;
hole mobility;
molecular weight;
piezoresistive devices;
piezoresistance;
silicon;
strain-dependent hole masses;
piezoresistive properties;
band mixing mass change;
light hole;
spin-orbit split-off bands;
degeneracy lifting mass change;
Si;
56.
Screening of water dipoles inside finite-length armchair carbon nanotubes
机译:
有限长度扶手碳纳米管内水偶极子的筛选
作者:
Yan Li
;
Deyu Lu
;
Rotkin S.V.
;
Schulten K.
;
Ravaioli U.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
carbon nanotubes;
tight-binding calculations;
ab initio calculations;
energy gap;
dielectric properties;
water dipoles;
finite-length armchair carbon nanotubes;
short single-walled carbon nanotubes;
delocalized /spl pi/-electrons;
electronic structure;
dielectric properties;
finite-length armchair SWNT;
self-consistent /spl pi/-orbital tight binding method;
third nearest neighbor interaction;
periodic oscillation;
finite band gap;
nanotube length;
HOMO-LUMO orbitals;
ab initio calculations;
uniform electric fields;
parallel screening constant /spl epsiv//sub /spl par//;
perpendicular screening constant /spl epsiv//sub /spl perp//;
57.
Monte Carlo hole mobility calculations with a first principles alloy scattering approach
机译:
Monte Carlo Hole Hop的流动性计算与合金散射方法的第一个原理
作者:
Zorman B.
;
Krishnan S.
;
Vasileska D.
;
Jialei Xu
;
Van Schilfgaarde M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
hole mobility;
Monte Carlo methods;
S-parameters;
scattering;
alloys;
Monte Carlo hole mobility calculations;
first principles alloy scattering approach;
first principles density functional theory;
Broyden-Fletcher-Goldfarb-Shanno minimization;
58.
Scattering from body thickness fluctuations in double gate MOSFETs: an ab initio Monte Carlo simulation study
机译:
双栅MOSFET中的体厚波动散射:AB Initio Monte Carlo仿真研究
作者:
Riddet C.
;
Brown A.
;
Alexander C.
;
Watling J.R.
;
Roy S.
;
Asenov A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
Monte Carlo methods;
logic gates;
scattering;
ab initio calculations;
body thickness fluctuations;
double gate MOSFET;
Monte Carlo simulation;
real space trajectories;
density gradient equation;
59.
Multi-dimensional tunneling in density-gradient theory
机译:
密度梯度理论中的多维隧道
作者:
Ancona M.G.
;
Lilja K.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
tunnelling;
electron density;
semiconductor device models;
multidimensional tunneling;
density-gradient theory;
device simulation;
electron density;
60.
Local discontinuous Galerkin methods for moment models in device simulations: formulation and one dimensional results
机译:
局部不连续的Galerkin方法在设备模拟中的时刻模型:配方和一维结果
作者:
Yunxian Liu
;
Chi-Wang Shu
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
Galerkin method;
finite element analysis;
method of moments;
local discontinuous Galerkin methods;
finite element method;
various time dependent moment models;
steady state moment models;
semiconductor device simulations;
heat conduction;
potential equation;
electrical field;
energy transport models;
quantum drift-diffusion;
quantum hydrodynamic models;
kinetic models;
spatial derivatives;
k-p adaptivity;
61.
Tunable optical properties of colloidal quantum dots in electrolytic environments
机译:
电解环境中胶体量子点的可调光学性质
作者:
Stroscio M.A.
;
Dutta M.
;
Ramadurai D.
;
Kohanpour B.
;
Alexson D.
;
Peng Shi
;
Sethuraman A.
;
Yang Li
;
Saini V.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum dots;
colloidal crystals;
wide band gap semiconductors;
spectra;
electrolytes;
Fermi level;
II-VI semiconductors;
cadmium compounds;
molecular electronics;
tunable optical properties;
colloidal quantum dots;
electrolytic environments;
absorption spectra;
electrolytic solutions;
electrolyte concentration;
absorption threshold;
electrolytic screening;
intrinsic spontaneous polarization;
wurtzite quantum dots;
electrolyte-dependent absorption properties;
Fermi-level tuning;
carbon nanotubes;
high density networks;
biomolecular links;
CdS;
62.
Three-dimensional finite-difference time-domain simulation of facet reflection through parallel computing
机译:
平行计算的小平面反射的三维有限差分时间域模拟
作者:
Labukhin D.
;
Xun Li
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
optical waveguides;
superluminescent diodes;
semiconductor optical amplifiers;
finite difference time-domain analysis;
light reflection;
reflectivity;
3D finite-difference time-domain simulation;
facet reflection;
parallel computing;
optoelectronic devices;
super-luminescent light emitting diodes;
semiconductor optical amplifiers;
optical waveguides;
waveguide ridge shape;
facet tilting scheme;
modal reflectivity;
63.
Scaling pFET hot-electron injection
机译:
缩放PFET热电子注入
作者:
Duffy C.
;
Hasler P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
hot carriers;
charge injection;
impact ionisation;
Boltzmann equation;
phonons;
conduction bands;
semiconductor device models;
pFET hot-electron injection scaling;
p-channel MOSFET;
hole-induced impact ionization;
empty conduction band;
electrons migration;
spatially-varying Boltzmann transport equation;
distribution function alteration;
optical phonon absorption;
optical phonon emission;
64.
Simulation schemes in 2D nanoscale MOSFET's: WKB based method
机译:
2D纳米级MOSFET中的仿真方案:基于WKB的方法
作者:
Ben Abdallah N.
;
Negulescu C.
;
Mouis M.
;
Polizzi E.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
Schrodinger equation;
Poisson equation;
electrostatics;
finite element analysis;
finite difference methods;
Green's function methods;
semiconductor device models;
WKB calculations;
nanoelectronics;
circuit complexity;
electronic engineering computing;
2D nanoscale MOSFET;
WKB based method;
numerical method;
quantum transport simulation;
silicon ultrashort channel;
DGFET;
ballistic rind;
Schrodinger equations;
quantum transmitting boundary conditions;
Poisson equation;
electrostatic potential;
Schrodinger-Poisson systems;
open boundary conditions;
finite element methods;
finite difference methods;
Greens function techniques;
finite element approximation;
65.
Treatment of point defects in nanowire MOSFETs using the nonequilibrium Green's function formalism
机译:
非Quiribium函数形式主义的纳米尺寸MOSFET中点缺陷的处理
作者:
Bescond M.
;
Autran J.-L.
;
Cavassilas N.
;
Munteanu D.
;
Lannoo M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
nanowires;
point defects;
Green's function methods;
Poisson equation;
Schrodinger equation;
ballistic transport;
nanowire MOSFET;
nonequilibrium Green's function formalism;
point defect treatment;
3D Poisson equation;
Schrodinger equation;
mode-space representation;
ballistic transport;
tight-binding theory;
first-neighbor-interactions;
ellipsoidal energy band approximation;
electronic transport;
66.
Modeling of inelastic transport in one-dimensional metallic atomic wires
机译:
一维金属原子电线非弹性运输建模
作者:
Frederiksen T.
;
Brandbyge M.
;
Lorente N.
;
Jauho A.-P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
nanowires;
nanoelectronics;
molecular electronics;
quantum theory;
vibrational modes;
semiconductor quantum wires;
inelastic transport modeling;
1D metallic atomic wires;
atomic-size conductors;
nanoelectronics;
molecular electronics;
quantum effects;
macroscopic devices;
transport properties;
quantum mechanics;
electronic degrees of freedom;
mechanical degrees of freedom;
1D tight-binding model;
conducting electrons;
balls-and-springs model;
mechanical motion;
vibrational modes;
wire frequencies;
electronic Hamiltonian;
67.
Simulation of power gain and dissipation in field-coupled nanomagnets
机译:
现场耦合纳米磁体功率增益和耗散的仿真
作者:
Csaba G.
;
Lugli P.
;
Csurgay A.
;
Porod W.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
cellular automata;
micromagnetics;
magnetic particles;
magnets;
nanostructured materials;
power gain;
power dissipation;
field-coupled nanomagnets;
field-coupled computing;
quantum cellular automata;
magnetization state;
magnetization dynamics;
Landau-Lifshitz equations;
power flow relations;
magnetic field distributions;
micromagnetic model;
single-domain approximation;
68.
Hierarchical multiscale computations of ion transport in synthetic nanopores
机译:
合成纳米孔中离子输送的分层多尺度计算
作者:
Joseph S.
;
Chatterjee A.N.
;
Aluru N.R.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
ionic conductivity;
molecular dynamics method;
self-diffusion;
nanostructured materials;
ion mobility;
density functional theory;
silicon compounds;
hierarchical multiscale computation;
ion transport computations;
synthetic nanopores;
two level multiscale simulations;
continuum Poisson Nernst Planck theory;
molecular dynamics simulation;
current-voltage characteristics;
silicon dioxide membrane;
ion conductivity;
ion self diffusion;
nanopore confinement;
diffusion coefficient;
SiO/sub 2/ nanopores;
KCl solution;
NaCl solution;
semiempirical AMI;
transport coefficient;
5 nm;
3 nm;
2 nm;
1.2 nm;
SiO/sub 2/;
KCl;
NaCl;
69.
Simulations of sub-100nm strained Si MOSFETs with high-k gate stacks
机译:
具有高k栅极堆叠的Sub-100nm紧张SI MOSFET的模拟
作者:
Yang L.
;
Watling J.R.
;
Adam-Lema F.
;
Asenov A.
;
Barker J.R.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
semiconductor device models;
nanotechnology;
dielectric materials;
soft modes;
interface roughness;
Monte Carlo methods;
elemental semiconductors;
silicon;
strained Si MOSFET;
high-k gate stacks;
high-k dielectrics;
mobility degradation;
interface roughness;
soft optical phonon scattering;
ensemble Monte Carlo device simulator;
100 nm;
Si;
70.
On the formation of periodic electric field domains in p-Si/SiGe quantum cascade structures
机译:
关于P-Si / SiGe量子级联结构中周期电场畴的形成
作者:
Ikonic Z.
;
Harrison P.
;
Kelsall R.W.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum wells;
Poisson equation;
hole mobility;
electric fields;
Ge-Si alloys;
infrared detectors;
photodetectors;
periodic electric field domain formation;
p-Si/SiGe quantum cascade structures;
biased semiconductor quantum well cascade structures;
homogeneous electric field;
charge redistribution;
space-charge contribution;
stationary periodic domains;
hole transport;
quantized subbands;
full anisotropy;
heavy hole subbands;
light hole subbands;
scattering mechanisms;
deformation potential;
acoustic phonons;
optical phonons;
alloy disorder;
carrier-carrier scattering;
hole scattering rates;
carrier heating;
thermal self-consistency;
discretized Poisson equation;
contact boundary conditions;
periodic boundary conditions;
electric field distribution;
periodic segments;
period-doubling model;
Si-SiGe;
71.
Simulations of sub-100nm strained Si MOSFETs with high-k gate stacks
机译:
具有高k栅极堆叠的Sub-100nm紧张SI MOSFET的模拟
作者:
Yang L.
;
Watling J.R.
;
Adam-Lema F.
;
Asenov A.
;
Barker J.R.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
semiconductor device models;
nanotechnology;
dielectric materials;
soft modes;
interface roughness;
Monte Carlo methods;
elemental semiconductors;
silicon;
strained Si MOSFET;
high-k gate stacks;
high-k dielectrics;
mobility degradation;
interface roughness;
soft optical phonon scattering;
ensemble Monte Carlo device simulator;
100 nm;
Si;
72.
Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling
机译:
纳米级半导体器件的3D模拟的代码,包括1D和2D子带中的漂移扩散和弹道传输,以及3D隧道
作者:
Fiori G.
;
Iannaccone G.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
gallium arsenide;
III-V semiconductors;
semiconductor device models;
nanoelectronics;
tunnelling;
Schrodinger equation;
Poisson equation;
density functional theory;
ballistic transport;
nanowires;
MOSFET;
semiconductor heterojunctions;
electronic engineering computing;
circuit simulation;
3D simulation;
nanoscale semiconductor devices;
drift-diffusion;
ballistic transport;
1D subband;
2D subband;
3D tunneling;
device modeling;
quantum confinement;
MOSFET;
self-consistent solution;
many particle Schrodinger equation;
density functional theory;
nonlinear Poisson equation;
continuity equation;
electrons;
holes;
single electron transistor;
split gates;
AlGaAs heterostructure;
GaAs heterostructure;
silicon nanowire transistor;
GaAs;
AlGaAs;
73.
TCAD ready density gradient calculation of channel charge for Si/strained Si/sub 1-x/Ge/sub x/ dual channel pMOSFETs on 001 relaxed Si/sub 1-y/Ge/sub y/
机译:
TCAD就绪密度梯度计算SI /应变SI / SUB 1-X / GE / SUB X /双通道PMOSFET上的信道电荷对001放松SI / SUB 1-Y / GE / SUB y /
作者:
Nguyen C.D.
;
Pham A.T.
;
Jungemann C.
;
Meinerzhagen B.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
technology CAD (electronics);
semiconductor device models;
carrier mobility;
carrier density;
Ge-Si alloys;
TCAD ready density gradient calculation;
relaxed Si/sub 1-y/Ge/sub y/;
threshold voltage;
gate capacitance;
channel charge distribution modeling;
n-type substrate doping;
hole confinement;
gate bias;
CV-characteristics;
strained Si-SiGe dual channel pMOSFET;
carrier mobility;
SiGe;
74.
Random doping fluctuations of small-signal parameters in nanoscale semiconductor devices
机译:
纳米级半导体器件中小信号参数的随机掺杂波动
作者:
Andrei P.
;
Mayergoyz I.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor doping;
Boltzmann equation;
fluctuations;
semiconductor device models;
Jacobian matrices;
transport processes;
electric admittance;
random doping fluctuations;
small-signal parameters;
nanoscale semiconductor devices;
transconductance;
gate capacitance;
admittance matrix parameters;
transport equations;
second-order derivatives;
Jacobian matrix;
first-order derivatives;
device simulators;
75.
Simulation of three-dimensional copper-low-k interconnections with different shapes
机译:
用不同形状模拟三维铜低k互连
作者:
Yiming Li
;
Jam-Wem Lee
;
Hong-Mu Chou
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
VLSI;
integrated circuit interconnections;
system-on-chip;
aluminium;
copper;
3D copper-low-k interconnections;
nanodevice;
very large scale integration;
system-on-a-chip;
device fabrication technology;
VLSI SoC design;
copper interconnects geometry;
resistance;
capacitance;
time constant;
RC time delay;
Cu;
Al;
76.
Efficient memory management for cellular Monte Carlo algorithm
机译:
蜂窝蒙特卡罗算法的高效内存管理
作者:
Branlard J.
;
Aboud S.
;
Goodnick S.
;
Saraniti M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
storage management chips;
charge exchange;
table lookup;
Monte Carlo methods;
circuit optimisation;
electronic engineering computing;
circuit complexity;
memory management;
cellular Monte Carlo algorithm;
ensemble Monte Carlo;
charge transport;
look-up tables;
charge carrier;
random number generation;
access storage;
RAM;
77.
Computer simulation of magnetization for vertically coupled nanoscale quantum rings
机译:
垂直耦合纳米级量子环磁化计算机仿真
作者:
Yiming Li
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum wells;
III-V semiconductors;
effective mass;
magnetisation;
indium compounds;
gallium arsenide;
nanoelectronics;
quasiparticles;
magnetization simulation;
energy spectra;
vertically coupled nanoscale semiconductor quantum rings;
magnetic field;
3D effective one-band Hamiltonian;
energy-dependent quasiparticle effective mass approximation;
position-dependent quasiparticle effective mass approximation;
Ben Daniel-Duke boundary conditions;
vertically coupled regions;
stacked layers;
jumping period;
jumping magnitude;
energy shell structure;
InAs-GaAs;
78.
Monte-Carlo simulation of carbon nanotube devices
机译:
碳纳米管器件的Monte-Carlo仿真
作者:
Hasan S.
;
Jing Guo
;
Vaidyanathan M.
;
Alam M.A.
;
Lundstrom M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
carbon nanotubes;
Monte Carlo methods;
electron mobility;
electron transport theory;
semiconductor device models;
Monte-Carlo simulation;
carbon nanotube devices;
coaxially gated geometry;
79.
On the electrostatics of double-gate and cylindrical nanowire MOSFETs
机译:
在双闸和圆柱纳米线MOSFET的静电装置上
作者:
Gnani E.
;
Reggiani S.
;
Rudan M.
;
Baccarani G.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
CMOS integrated circuits;
semiconductor device models;
nanowires;
nanoelectronics;
electrostatics;
Poisson equation;
Schrodinger equation;
mesh generation;
eigenvalues and eigenfunctions;
network topology;
electrostatics;
double-gate MOSFET;
cylindrical nanowire MOSFET;
MOSFET scaling;
ITRS provisions;
device architectures;
CMOS technology;
short-channel effect containment;
DIBL effect containment;
fully-depleted DG MOSFET;
CNW MOSFET;
channel length;
2D Poisson equation;
1D Schrodinger equations;
mesh points;
energy eigenfunctions;
unperturbed eigenfunctions;
25 nm;
80.
A Legendre polynomial solver for the Langevin Boltzmann equation
机译:
Langevin Boltzmann方程的Legendre多项式求解器
作者:
Jungemann C.
;
Meinerzhagen B.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
technology CAD (electronics);
semiconductor device noise;
Legendre polynomials;
Boltzmann equation;
frequency-domain analysis;
Legendre polynomial solver;
Langevin Boltzmann equation;
noise simulation;
Monte Carlo method;
time-domain based method;
frequency domain method;
LBE numerical solver;
Legendre polynomial expansion;
MC simulation;
81.
Spectral element method for the Schrodinger-Poisson system
机译:
Schrodinger-Poisson系统的光谱元件方法
作者:
Candong Cheng
;
Qing Huo Liu
;
Massoud H.Z.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
nanoelectronics;
finite element analysis;
quantum well devices;
Legendre polynomials;
Newton method;
Schrodinger equation;
Poisson equation;
potential energy functions;
predictor-corrector methods;
MOSFET;
spectral element method;
Schrodinger-Poisson system;
self-consistent solution;
semiconductor nanodevice simulation;
Gauss-Lobatto-Legendre polynomials;
Schrodinger equation;
potential energy;
charge distributions;
predictor-corrector algorithm;
self-consistent iteration;
nonlinear Poisson equation;
Newton method;
infinite quantum well;
MOSFET;
82.
Robust computational models of quantum transport in electronic devices
机译:
电子设备中量子传输的鲁棒计算模型
作者:
Fedoseyev A.I.
;
Przekwas A.
;
Turowski M.
;
Wartak M.S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
nanoelectronics;
tunnelling;
technology CAD (electronics);
Schottky barriers;
Wigner distribution;
Boltzmann equation;
quantum transport models;
quantum current;
nanoscale electronic device simulation;
device simulator software;
tunneling current simulation;
direct tunnel current;
reverse tunnel current;
tunnel junction;
Schottky contact;
gate induced drain leakage;
drift-diffusion approach;
CFDRC-TCAD simulator;
thin potential barrier;
tunnel mobility;
Wigner function method;
quantum Boltzmann transport model;
83.
First-principles modeling of molecular I-Vs and calibration to experiments
机译:
分子I-VS和实验校准的第一原理建模
作者:
Rakshit T.
;
Ghosh A.
;
Geng-Chiau Liang
;
Datta S.
;
Damle P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
electronic structure;
molecular electronics;
first-principles modeling;
molecular I-V modelling;
computationally efficient method;
capacitance-voltage characteristics;
current-voltage characteristics;
molecules modelling;
molecular wires;
electrode coupling;
single-electron charging;
self-consistent field regime;
84.
Comparison of non-equilibrium Green's function and quantum-corrected Monte Carlo approaches in nano MOS simulation
机译:
纳米MOS模拟中非平衡绿色功能和量子校正蒙特卡罗方法的比较
作者:
Tsuchiya H.
;
Ogawa M.
;
Miyoshi T.
;
Svizhenko A.
;
Anantram M.P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
Monte Carlo methods;
Green's function methods;
impurity scattering;
plasmons;
nanoelectronics;
ballistic transport;
nonequilibrium Green function;
quantum-corrected Monte Carlo approaches;
nano MOS simulation;
ultra-short channel device;
impurity effect;
plasmon scatterings;
drain current degradation;
dominant scattering processes;
carrier quasi-ballistic behaviors;
nano-scale MOSFET;
85.
Simulation of ion conduction in the ompF porin channel using BioMOCA
机译:
使用生物体模拟OMBF孔隙通道中的离子传导
作者:
Kyu Ill-Lee
;
van der Straaten T.A.
;
Kathawala G.A.
;
Young June Park
;
Ravaioli U.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
molecular biophysics;
ionic conductivity;
biomembrane transport;
microorganisms;
potassium;
chlorine;
ion conduction simulation;
ompF porin channel transport;
BioMOCA simulation;
K/sup +/ transport;
Cl/sup -/ transport;
trimeric protein channel;
E coli bacterium membrane;
high-resolution molecular structure;
X-ray crystallography;
highly charged constriction region;
mutation studies;
DD simulations;
conductance properties;
BioMOCA simulator;
permanent charge distribution;
ompF conduction properties;
K;
Cl;
86.
Electrostatics of 3D carbon nanotube field-effect transistors
机译:
3D碳纳米管场效应晶体管的静电装置
作者:
Neophytou N.
;
Jing Guo
;
Lundstorm M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
field effect transistors;
carbon nanotubes;
electrostatics;
electrostatics;
3d carbon nanotube field-effect transistors;
CNFET structure;
charge transfer;
30 nm;
87.
Wigner-function based simulation of classic and ballistic transport in scaled DG-MOSFETs using the Monte Carlo method
机译:
基于蒙特卡罗法测定DG-MOSFET中的经典和弹道传输模拟
作者:
Gehring A.
;
Kosina H.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
semiconductor device models;
field effect transistors;
ballistic transport;
Monte Carlo methods;
tunnelling;
nanoelectronics;
logic devices;
Wigner-function based simulation;
ballistic transport;
scaled DG-MOSFET;
Monte Carlo method;
double-gate MOS transistor structures;
logic devices;
bulk MOS field-effect transistors;
channel lengths;
quantum effects;
source-to-drain tunneling;
quantum-mechanics;
carrier mean free paths;
scattering-limited transport;
quantum-correction methods;
quantum interference phenomena;
scattering processes;
Boltzmann collision operator;
Wigner Monte Carlo simulator;
silicon-based device simulation;
numerical particle annihilation;
multivalley band structure;
60 nm;
25 nm;
10 nm;
88.
A non-parabolic six moments model for the simulation of sub-100 nm devices
机译:
用于仿真Sub-100 NM设备的非抛物线六个矩模型
作者:
Grasser T.
;
Kosik R.
;
Jungemann C.
;
Kosina H.
;
Meinerzhagen B.
;
Selberherr S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
carrier density;
Boltzmann equation;
Monte Carlo methods;
method of moments;
nonparabolic six moments model;
Boltzmann equation;
drift-diffusion model;
energy-transport model;
carrier concentration;
self-consistent analytic-band simulation;
self-consistent full-band simulation;
Monte Carlo simulation;
100 nm;
89.
RF performance of strained SiGe pMOSFETs: linearity and gain
机译:
紧张SiGe PMOSFET的RF性能:线性和增益
作者:
Wei Ma
;
Kaya S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
silicon-on-insulator;
Ge-Si alloys;
strained SiGe pMOSFET;
linearity;
intrinsic gain;
SOI thickness;
Ge concentration;
graded channel MOSFET;
SiGe;
90.
The simulation of molecular and organic devices: a critical review and a look at future development
机译:
分子与有机器件的模拟:批判性综述和观察未来发展
作者:
Lugli P.
;
Csaba G.
;
Erlen C.
;
Harrer S.
;
Scarpa G.
;
Di Carlo A.
;
Pecchia A.
;
Latessa L.
;
Bolognesi A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
molecular electronics;
organic semiconductors;
circuit simulation;
molecular devices simulation;
organic devices simulation;
future developments;
device simulators;
organic field effect transistor;
91.
A self-consistent quantum mechanical simulation of p-channel strained SiGe MOSFETs
机译:
P沟道应变SiGE MOSFET的自一致量子力学模拟
作者:
Krishnan S.
;
Vasileska D.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
transport processes;
Monte Carlo methods;
ohmic contacts;
eigenvalues and eigenfunctions;
Ge-Si alloys;
self-consistent quantum mechanical simulation;
p-channel strained SiGe MOSFET;
hole current enhancement;
Schrodinger-Monte Carlo-Poisson transport model;
carrier eigenstates;
Schrodinger equation;
errors minimization;
quantum simulation;
channel boundaries;
Neumann boundary conditions;
ohmic contacts;
Dirichlet boundary conditions;
channel region;
25 nm;
SiGe;
92.
Monte Carlo simulations of phonon transport in silicon
机译:
硅子蒙特卡罗仿真硅
作者:
Asokan A.
;
Kelsall R.W.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
elemental semiconductors;
phonon-phonon interactions;
Monte Carlo methods;
Boltzmann equation;
thermal conductivity;
silicon;
Monte Carlo simulations;
thermal transport simulation;
semiconductor structures;
heat transport;
Boltzmann equation;
anharmonic phonon-phonon interactions;
electron transport modelling;
phonon trajectories;
phonon scattering;
discretized phonon distribution;
anharmonic three-phonon process;
acoustic phonon modes;
phonon-phonon absorption;
partner phonon;
electron-electron scattering;
electron transport simulations;
phonon transport simulations;
Umklapp processes;
thermal conductivity;
phonon lifetimes;
93.
Fano resonances through quantum dots in tunable Aharonov-Bohm rings
机译:
Fano通过调谐AHARONOV-BOHM环中的量子点谐振
作者:
Joe Y.S.
;
Kim J.S.
;
Hedin E.R.
;
Cosby R.M.
;
Satanin A.M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum dots;
quantum interference phenomena;
semiconductor device models;
Aharonov-Bohm effect;
S-matrix theory;
magnetic flux;
tunable Aharonov-Bohm rings;
resonant phenomena;
specially-designed dots;
transmission probability;
coupled double quantum dots;
magnetic flux;
electron transmission;
scattering matrix;
transfer matrix;
Fano resonance splitting;
Fano resonance disappearing;
Fano resonance shifting;
Breit-Wigner resonance;
magnetic AB flux;
potential well;
transmission resonance effects;
Young interference;
ring structure;
transmission zeroes;
closed T-stub;
Fano-interference;
asymmetric AB ring;
quasibound states;
94.
On the formation of periodic electric field domains in p-Si/SiGe quantum cascade structures
机译:
关于P-Si / SiGe量子级联结构中周期电场畴的形成
作者:
Ikonic Z.
;
Harrison P.
;
Kelsall R.W.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum wells;
Poisson equation;
hole mobility;
electric fields;
Ge-Si alloys;
infrared detectors;
photodetectors;
periodic electric field domain formation;
p-Si/SiGe quantum cascade structures;
biased semiconductor quantum well cascade structures;
homogeneous electric field;
charge redistribution;
space-charge contribution;
stationary periodic domains;
hole transport;
quantized subbands;
full anisotropy;
heavy hole subbands;
light hole subbands;
scattering mechanisms;
deformation potential;
acoustic phonons;
optical phonons;
alloy disorder;
carrier-carrier scattering;
hole scattering rates;
carrier heating;
thermal self-consistency;
discretized Poisson equation;
contact boundary conditions;
periodic boundary conditions;
electric field distribution;
periodic segments;
period-doubling model;
Si-SiGe;
95.
Three-dimensional finite-difference time-domain simulation of facet reflection through parallel computing
机译:
平行计算的小平面反射的三维有限差分时间域模拟
作者:
Labukhin D.
;
Xun Li
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
optical waveguides;
superluminescent diodes;
semiconductor optical amplifiers;
finite difference time-domain analysis;
light reflection;
reflectivity;
3D finite-difference time-domain simulation;
facet reflection;
parallel computing;
optoelectronic devices;
super-luminescent light emitting diodes;
semiconductor optical amplifiers;
optical waveguides;
waveguide ridge shape;
facet tilting scheme;
modal reflectivity;
96.
Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation
机译:
基于量子Boltzmann方程的Monte Carlo方法模拟Si和Ge UTB MOSFET
作者:
Gang Du
;
Xiaoyan Liu
;
Zhiliang Xia
;
Ruqi Han
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
Monte Carlo methods;
Boltzmann equation;
silicon;
germanium;
quantum computing;
UTB MOSFET;
Monte Carlo method;
quantum Boltzmann equation;
quantum potential;
collision broadening;
Si;
Ge;
97.
3D Monte Carlo analysis of discrete dopant effects on electron noise in Si devices
机译:
3D蒙特卡罗对SI器件电子噪声的离散掺杂作用分析
作者:
Dollfus P.
;
Velazquez J.E.
;
Bourne A.
;
Galdin-Retailleau S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
semiconductor device models;
semiconductor device noise;
Monte Carlo methods;
thermal noise;
doping profiles;
impurity distribution;
elemental semiconductors;
silicon;
3D Monte Carlo analysis;
discrete dopant effects;
electron noise;
Si devices;
thermal noise;
atomistic model;
continuum model;
electron-impurity interaction;
discrete impurities;
electron mobility;
Si resistors;
average doping concentration;
impurity position;
MOSFET channel;
50 nm;
Si;
98.
Modeling of the electrostatic (plasmon) resonances in metallic and semiconductor nanoparticles
机译:
金属和半导体纳米粒子中静电(近代)共振的建模
作者:
Mayergoyz I.D.
;
Zhenyu Zhang
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
surface plasmon resonance;
nanoparticles;
permittivity;
dispersion relations;
electrostatics;
molecular electronics;
semiconductor device models;
electrostatic plasmon resonance modeling;
metallic nanoparticles;
semiconductor nanoparticles;
resonant behavior;
object permittivity;
free-space wavelength;
trial-and-error method;
dielectric permittivities;
electromagnetic radiation;
resonance frequencies;
3D nanoparticles;
eigenvalues;
boundary integral equation;
resonance permittivity;
dispersion relations;
dielectric object shapes;
object dimensions;
99.
Self-consistent contact block reduction method for ballistic nanodevices
机译:
弹道纳米型的自洽接触块减少方法
作者:
Sabathil M.
;
Mamaluv D.
;
Vogl P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
ballistic transport;
quantum interference phenomena;
quantum theory;
Green's function methods;
contact block reduction method;
ballistic nanodevices;
open devices;
charge density;
open system;
eigenstates;
closed system;
100.
A critical examination of the basis of macroscopic quantum transport approaches
机译:
对宏观量子传输方法的基础的关键检查
作者:
Narayanan V.
;
Kan E.C.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
quantum electrodynamics;
semiconductor device models;
carrier density;
semiconductor heterojunctions;
inversion layers;
tunnelling;
Green's function methods;
macroscopic quantum transport;
quantum hydrodynamics;
quantum effect simulation;
semiconductor devices;
equilibrium Wigner function;
carrier energy;
equilibrium density matrix;
heterojunctions;
density gradient method;
MOS inversion layer transport modeling;
tunneling phenomena;
Greens function;
stress tensor;
local carrier gas density;
hydrodynamic hierarchy;
current transport equation;
barrier potentials;
barrier heights;
transport simulations;
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