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Micron and sub-micron scale characterization of interfaces in Thermal Interface Material systems

机译:热界面材料系统中界面的微米和亚微米尺度表征

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One of the key challenges in the thermal management of electronic packages are interfaces such as those between the chip and heat spreader and the interface between a heat spreader and heat sink or cold plate. Typically, thermal interfaces are filled with materials such as thermal adhesives and greases. Interface materials reduce the contact resistance between the mating heat generating and heat sinking units by filling voids and grooves created by the non-smooth surface topography of the mating surfaces, thus improving surface contact and the conduction of heat across the interface. However, micron and sub-micron voids and delaminations still exist at the interface between the interface material and the surfaces of the heat spreader and semiconductor device. In addition, a TIM may form a filler-depleted and resin-rich region at the interfaces. These defects, though at a small length scale, can significantly deteriorate the heat dissipation ability of a system consisting of a Thermal Interface Material (TIM) between a heat generating surface and a heat dissipating surface. The characterization of a freestanding sample of TIM does not provide a complete understanding of its interfacial behavior. However, system-level characterization of a TIM system, which includes its freestanding behavior and its interfacial behavior, provides a more accurate understanding. While, measurement of system-level thermal resistance provides an accurate representation of the system performance of a TIM, it does not provide information regarding the physical behavior of the TIM at the interfaces. This knowledge is valuable in engineering interface materials and developing assembly process parameters for enhanced system-level thermal performance. Characterization of an interface material between a silicon device and a metal heat spreader can be accomplished via several techniques. In this research, high-magnification radiography with Computed Tomography (CT), acoustic microscopy, and scanning electron microscopy were used to characterize various TIM systems. The results of these characterization studies are presented in this paper. System-level thermal performance results are compared to physical characterization results.
机译:之一在电子封装的热管理的主要挑战是诸如那些在芯片和散热器和散热器和散热片或冷却板之间的界面之间的界面。通常,热界面填充有诸如热粘合剂和润滑脂的材料。界面材料减少配合发热之间的接触电阻和加热由填充由配合表面的非平滑表面形貌产生的空隙和沟槽,从而改善表面接触和热跨越接口的导通下沉单元。然而,微米和亚微米的空隙和分层仍然存在在界面材料和散热器和半导体器件的表面之间的界面。另外,TIM可形成在界面处的填充物贫化的和富含树脂区域。这些缺陷,尽管在小的长度尺度,可以显著恶化的发热表面和散热表面之间由热界面材料(TIM)的系统的散热能力。 TIM的独立样本的特性并没有提供它的界面行为的完整理解。然而,TIM系统的系统级特性,包括其独立行为及其界面的行为,提供了一个更准确的了解。同时,系统级热电阻的测量提供了TIM的系统性能的准确表示,但它不提供关于所述TIM的界面处的物理行为的信息。这方面的知识是在工程界面材料有价值和发展,增强系统级的散热性能装配工艺参数。硅器件和金属散热器之间的界面材料的表征可通过多种技术来实现。在这项研究中,与计算机断层摄影(CT),声学显微镜和扫描电子显微镜高倍放大射线照相术来表征各种TIM系统。这些特性研究的结果本文提出。系统级的散热性能结果进行比较,以物理表征结果。

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