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Magnetic phase diagram and critical current of BaFe_2As_2 single crystals with hole- and electron-doping

机译:BAFE_2AS_2单晶的磁相图和临界电流,具有孔和电子掺杂

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We report on comparative study of magnetic phase diagram and critical current of the hole- and electron-doped BaFe_2As_2 single crystals with close values of superconducting critical temperature, T_c, (slightly underdoped Ba_(0.64)K_(0.36)Fe_2As_2 with T_c=25K and optimally doped BaFe_(1.9)Ni_(0.1)As_2 with T_c=20K) obtained from measurements of the temperature dependence of ac-susceptibility and isothermal irreversible magnetization loops, M(H), in magnetic fields parallel to the c-axis of the crystal. From ac-susceptibility measurements we get estimation of a slope of the upper critical field, H_(c2), in dependence on temperature, dH_(c2)/dT ≈ -4.2T/K for BaFe_(1.9)Ni_(0.1)As_2 single crystal and H_(c2)/dT ≈ -1.75T/K for Ba_(0.64)K_(0.36)Fe_2As_2 sample that in accordance with Werthamer, Helfand, and Hohenberg (WHH) model gives H_(c2)(0) = 0.69T_c((dH_(c2))dT) ≈ 56T for BaFe_(1.9)Ni_(0.1)As_2 sample and lower value of H_(c2)(0) ≈ 31T for Ba_(0.64)K_(0.36)Fe_2As_2 crystal. However, obtained from M(H) measurements temperature dependence of the irreversibility field, H_(irr)(T), for BaFe_(1.9)Ni_(0.1)As_2 crystal located below the one for Ba_(0.64)K_(0.36)Fe_2As_2 crystal. Furthermore, at T=4.2K and higher temperatures our results for critical current density, J_c, calculated from M(H) curves clearly show slower reduction of J_c with increasing field in even underdoped Ba_(0.64)K_(0.36)Fe_2As_2 sample compared to optimally doped BaFe_(1.9)Ni_(0.1)As_2 crystal demonstrating higher capacity of K-doped 122 compounds for production of superconducting cables and wires with high critical current in strong magnetic fields.
机译:我们报告了磁相图和孔和电子掺杂Bafe_2AS_2单晶的临界电流的比较研究,具有超导临界温度,T_c(略微下降的BA_(0.64)k_(0.36)FE_2AS_2,T_C = 25K和25K和具有T_C = 20k的最佳掺杂的BAFE_(1.9)NI_(0.1)AS_2)从测量AC - 易感性和等温不可抗拒的磁化环,M(H)的温度依赖性的测量中,在平行于晶体的C轴的磁场中。来自交流敏感度测量,我们得到了估计上临界场的斜率,H_(C2),依赖于温度,DH_(C2)/DT≈-4.2T / k for Bafe_(1.9)Ni_(0.1)单个Crystal和H_(C2)/DT≈BA_(0.64)K_(0.36)FE_2AS_2样本,按照龙门,众所周的,众所周知和HOHENBERG(WHH)模型给出H_(C2)(0)= 0.69T_C ((DH_(C2))DT)≈56T为Bafe_(1.9)Ni_(0.1)AS_2样品和较低值的H_(C2)(0)≈13T对于BA_(0.64)K_(0.36)FE_2AS_2晶体。然而,从M(h)测量值的温度依赖性的不可逆性场,H_(IRR)(T),用于位于BA_(0.64)K_(0.36)FE_2AS_2晶体下方的BAFE_(1.9)Ni_(0.1)AS_2晶体。此外,在T = 4.2k和更高的温度下,我们对临界电流密度的结果,J_C从M(H)曲线计算出明显地显示J_C的较慢降低,甚至是甚至是下方的BA_(0.36)k_(0.36)FE_2AS_2样本中的升高的场景最佳掺杂的Bafe_(1.9)Ni_(0.1)AS_2晶体表明k掺杂的122化合物的高容量,用于生产具有高磁场中具有高临界电流的超导电缆和电线。

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