Carriers' lifetimes in an impure ferromagnetic domain wall

摘要

Domain walls (DWs) in ferromagnetic metals are known to be a source of resistance. Minority and majority carriers' lifetime is reduced due to impurity scattering. In the elastic regime, carriers' lifetimes can be determined using the scattering rates of relaxation interaction. We show that the values of carriers' lifetimes are sensitive to impurity configuration.