NEW LOW-LOSS AND SMALL-SIZED 1700V IGBT MODULE WITH AVANCED IGBT CHIP

摘要

This paper presents the characteristics of newly developed 1700V IGBT module for the first time. New IGBT devices with trench gate and Field-Stop structure are installed in this module. By connection with our advanced packaging technology, this new IGBT module leads to the higher power integration. Furthermore, total power dissipation can be reduced by approximately 25% over the conventional IGBT modules.