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Experimental assessment of logic circuit performance variability with regular fabrics at 90nm technology node

机译:90nm技术节点常规织物逻辑电路性能变异的实验评估

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Regular fabric structure is expected to reduce the process variations and increase the yield in sub-micron technology regime. Few experimental assessments, however, for the effectiveness of the regular structures has been carried out yet. In this paper, three kinds of circuit blocks are implemented with four kinds of layout styles with different regularity, and the effect of regularity on the circuit performance variations is evaluated. A test chip is fabricated with 90nm CMOS logic process and measured results show that the regular structure increases average delay, and the worst delay of the regular structure is not better than the worst delay of normal circuits with irregular standard cells.
机译:预计常规织物结构将减少过程变化并提高亚微米技术方案的产量。然而,对于常规结构的有效性,少数实验评估已经进行了尚未进行。在本文中,三种电路块用具有不同规律性的四种布局样式实现,并且评估了规则性对电路性能变化的影响。用90nm CMOS逻辑过程制造测试芯片,测量结果表明,常规结构增加了平均延迟,并且常规结构的最差延迟并不优于具有不规则标准电池的正常电路的最差延迟。

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