Towards Using Multiferroism in Optoelectronics and Spintronics: Tunneling, Confinement and Optical Properties of Si/BiMnO_3 Systems

摘要

Confinement and optical properties in Si/BiMnO3/Si quantum wells are addressed. The characteristics of the confined excitons are determined varying the band offset, which was not measured or calculated yet. The ground state e-hh exciton binding energy is shown to be in the 3–4 meV range, and exciton based 1600 – 1700 nm optical emission is demonstrated to be feasible by varying the quantum well width from 3 nm to 10 nm. The characteristics of electron tunneling across BiMnO3/Si/BiMnO3 barriers are also presented.