Electrical, Magnetic and Magnetooptical Properties of Bulk (Zn,Mn)Te Semimagnetic Semiconductor Doped with Phosphorus

摘要

The observation of carrier-induced ferromagnetism in bulk phosphorus-doped Zn1–xMnxTe is reported Using high-pressure Bridgman growth together with high-temperature and high-pressure post-growth annealing, we were able to overcome the self-compensation in this material, thus achieving unprecedented concentration of electrically active acceptors. Magnetic susceptibility and magnetic circular dichroism measurements on the system prepared in this way clearly reveal the occurrence of a ferromagnetic sate.