Electrical manifestation of ferromagnetic ordering in phosphorus-doped semimagnetic semiconductor Zn_(1-x)Mn_xTe

摘要

Zn_(1-x)Mn_xTe semimagnetic semiconductor doped with phosphorus has been investigated by means of the resistivity, Hall effect, and magnetic susceptibility measurements. It was demonstrated that in Zn_(1-x)Mn_xTe:P the Mn-Mn antiferromagetic superexchange interaction can be controlled by changing the hole concentration and that the Mn-Mn ferromagnetic interaction was observed at the hole concentration level of 5 x 10~(18) cm~(-3). This Mn-Mn ferromagnetic interaction has resulted in a strong temperature dependence of the resistivity, which follows log ρ ～ 1/T~2. A phenomenological calculation has been performed taking into account the magnetic contribution to the carrier binding energy. The calculation well describes the temperature dependence of the resistivity of the highly P-doped Zn_(1-x)Mn_xTe crystals.