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Cyclotron Resonance of Two Dimensional Electrons near the Metal-Insulator Transition

机译:金属绝缘体过渡附近的二维电子的回旋谐振

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We have performed the cyclotron resonance measurements on two-dimensional (2D) electrons near the metal-insulator transition. Both the cyclotron scattering time (tau)_(CR) and the transport scattering time (tau)_(t) exhibit a metallic temperature dependence. This fact suggests that the electron state of the metallic phase does not change so much under 100 GHz millimeter-wave radiation. The values of (tau)_(t)/(tau)_(CR) are close to unity, indicating that short-range potential fluctuations which lead to large angle scattering are dominant in the metallic phase of Si/SiGe.
机译:我们已经在金属绝缘体转换附近的二维(2D)电子上进行了回旋谐振测量。回旋散射时间(TAU)_(CR)和传输散射时间(TAU)_(T)都表现出金属温度依赖性。这一事实表明金属相的电子状态不会在100GHz毫米波辐射下变化如此多。 (Tau)_(t)/(tau)_(Cr)的值接近统一,表明导致大角度散射的短程潜在波动在Si / SiGe的金属相中显着。

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