Independent Control of Dot Occupancy and Reservoir Electron Density in a One-electron Quantum Dot

摘要

We report on low-temperature electronic transport measurements and Technology Computer Aided Design (TACD) modeling of a silicon metal-oxide-semiconductor (MOS) quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads and vice versa. Appropriate gate biasing enables the dot occupancy to be reduced to the single-electron level. Independent gate control of the electron reservoirs also enables discrimination between excited states of the dot and density of states (DOS) modulations in the leads.