首页> 外文会议>International Conference on the Physics of Semiconductors >Signature of Singlet-Triplet Crossing in PL in GaAs QW's
【24h】

Signature of Singlet-Triplet Crossing in PL in GaAs QW's

机译:在Gaas QW的PL中的单身三联网翻滚签名

获取原文

摘要

Positively charged excitons in a two-dimensional hole gas in symmetric and asymmetric GaAs/Ga_(1-x)Al_xAs quantum wells are studied in polarization-resolved photoluminescence experiments in high magnetic fields B (up to 23 T) and low temperatures (down to 300 mK). The experiments are accompanied by numerical calculations of a real structure. The whole family of trions (the singlet and a pair of triplets) are observed. The Coulomb energies crossing of singlet and triplet is found: hidden in symmetric and visible in asymmetric structures.
机译:在对称和不对称GaAs / Ga_(1-x)Al_xas量子孔中的二维空穴气体中的带正电的激子在高磁场B(最多23t)和低温下(下降到)中的偏振分辨的光致发光实验中研究了偏振分辨的光致发光实验300 mk)。实验伴随着实际结构的数值计算。观察到整个细胞(单线态和一对三胞胎)。发现了单态和三联的Coulomb能量交叉:隐藏在对称和不对称结构中。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号