Mechanism of electron-hole pair generation and light emission for electro-luminescence devices with silicon nano-crystals prepared by laser ablation method

摘要

Mechanism of electron-hole pair generation and light emission for electro-lumniescence devices with silicon nano-crystals prepared by laser ablation method is studied. It is found that the properties of the present device are strongly influenced by the existence of the high electric field, which stems from the band discontinuity at the boundary between ITO and the Si nano-crystalline layer.