Resonant photoluminescence spectroscopy of InGaN/GaN single quantum well structures

摘要

The photoluminescence spectra of InGaN/GaN single quantum well structures, with indium fractions of 0.15 and 0.25, have been studied under resonant excitation conditions. The low-temperature (T=6 K) photoluminescence spectra have revealed various spectral features that we attribute to LO-phonon accompanied recombination from directly excited localized states and acoustic-phonon assisted emission and absorption from a distribution of localized states.