Simulation study of plasma etching in the GEC reference cell with SF_6

摘要

Here we present 2D simulations of a silicon etching process performed by an inductively driven SF_6 plasma in the GEC reference cell. The simulations are performed with the Quantemol-D system and build upon previous calculations of SF_6 plasma chemistries made using the Quantemol-P system. Pressure and power trends along with chamber-wide contour plots of gas-phase species concentrations and fundamental plasma properties are obtained. We find good agreement with experimental results, which validates the underlying model and illustrates the important role of simulation work in the development and optimization of plasma processing setups.