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Electronic structure and origin of ferromagnetism in Ga_(1-x)Mn_xAs semiconductors

机译:Ga_(1-x)Mn_xas半导体中的电子结构和铁磁性起源

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We perform a detailed theoretical study, within the density-functional theory, of the electronic structure and magnetic properties of Ga_(1-x)Mn_xAs diluted semiconductors. Ab initio total energy results provide evidence that the appearance of a ferromagnetic state in these materials is due to an exchange coupling between the localized ↑ S = 5/2 Mn spins mediated by quasi-localized ↓ holes, with strong p-like character, surrounding the fully polarized Mn d~5-electrons. From total energy differences, we find the effective Mn-Mn coupling always ferromagnetic, with the Mn-Mn interaction intermediated by an antiferromagnetic coupling of each Mn spin to the holes.
机译:我们在密度函数理论内进行详细的理论研究,对Ga_(1-x)Mn_xas稀释半导体的电子结构和磁性。 AB Initio总能源结果提供了证据表明,这些材料中的铁磁状态的外观是由于局部↑S = 5/2 MN旋转之间的交换耦合,由准局部↓孔介导,具有强烈的p样特征,周围完全偏振的Mn D〜5 - 电子。从总能量差异,我们发现有效的Mn-Mn耦合始终是铁磁性的,并且通过每个Mn的每个Mn的反铁磁耦合旋转到孔的Mn-Mn相互作用。

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