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Properties of Schottky Barrier p-Cd_xHg_(1-x)Te Structures with Metal-Tunnel Transparent Dielectric

机译:金属隧道透明电介质肖特基屏障P-CD_XHG_(1-X)TE结构的特性

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Potential barriers in Schottky diodes with a metal-tunnel transparent dielectric based on Cd_xHg_(1-x)Te (CMT) with x~0.2 have been studied. We used In, Tn, Al and Cr as metal barriers. Superthin dielectric, and fluorine plasma films were deposited between the CMT surface and a metal.
机译:研究了基于CD_XHG_(1-X)TE(CMT)的金属隧道透明电介质的肖特基二极管的潜在障碍已经研究。我们用于金属屏障的,TN,Al和Cr。 SuperPhin电介质和氟等离子体膜沉积在CMT表面和金属之间。

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