Photoelectric properties of planar structures with double Schottky barrier treated with double Schottky barrier treated in a high-vacuum microwave discharge

摘要

The state of the surface of n-GaAs crystals upon high-vacuum microwave plasmachemical (HVMWPC) etching in various gas mixtures and the influence of the semiconductor surface condition on the photoelectric characteristics of related metal-semiconductor-metal structures with double Schottky barrier (MSMDSB structures) are investigated. Dependence of the HVMWPC etching rate of the GaAs surface on the gas mixture composition and substrate temperature is determined. It is shown that the HVMWPC etching regime strongly influences the photoelectric properties of MSMDSB structures: the treatment can lead to either growth or drop in photosensitivity of the samples. Optimum etching regimes are established for which good semiconductor surface quality and high photosensitivity of the MSMDSB structures are retained at a high etching rate.