The State of the Art and Prospects of Cd_xHg_(1-x)Te Molecular Beam Epitaxy

摘要

Molecular beam epitaxy of MCT makes it possible to dissolve the problems of producing MCT heteroepitaxial structures with uniformity parameters on the large size alternative substrates for IR PD of existent and new generation and the growing of MCT layers on Si -substrates. The information about characteristics of geteroepitaxial structures on GaAs-substrates, a new generation equipment for controlled growing of MCT layers by MBE and technological conditions allowed to grow the epitaxial buffer CdTe layers on Si-substrates are represented in this work.