首页> 外文会议>International conference on photoelectronics and night vision devices >Variations of MCT photoconductors performance with background flux density
【24h】

Variations of MCT photoconductors performance with background flux density

机译:MCT光电导体性能与背景通量密度的变化

获取原文

摘要

Variations of peak detectivity D*(λ_p) and peak responsivity R_v(λ_p) values with background flux density have been examined on Photoconductive Mercury-Cadmium Telluride / Hg_(1-x)Cd_xTe (PC MCT) infrared radiation detectors. Measurements were performed at operating temperature T_(op) ≈ 78 K. Performance was measured on multi-element PC MCT infrared radiation detectors (N = 3x32 and 128 elements) with responsivity peak wavelength λ_p from 10,5 to 12,0 μm at the integral background flux density varied from (8-10)E+17 to (6-8)E+15 photon·cm~(-2)·sec~(-1). Tested PC MCT infrared radiation detectors demonstrate background limited performance (BLIP).
机译:在光电导的汞 - 镉碲化钠/ HG_(1-X)CD_XTE(PC MCT)红外辐射检测器上,已经检查了具有背景光量密度的峰值探测D *(λ_p)和峰值响应r_v(λ_p)值的峰值响应率R_v(λ_p)值。在操作温度T_(OP)≈78k中进行测量。在多元素PC MCT红外辐射检测器(n = 3x32和128元件)上测量性能,其响应峰值波长λ_p在10,5至12,0μm处整体后台磁通密度从(8-10)e + 17至(6-8)e + 15光子·cm〜(-2)·sec〜(-1)。测试的PC MCT红外辐射探测器展示背景有限的性能(BLIP)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号