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PHOTOELECTRICAL CHARACTERISTICS OF STRUCTURES WITH NONRECTANGULAR QUANTUM WELLS

机译:非抗体量子阱结构的光电特性

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For analytical description of multiple quantum well superlattices (MQW) main characteristics, for example, current-voltage characteristic (CVC), the model of well with rectangular and symmetric walls is usually used. However, deviation of experimental characteristics of real MQW from analytical dependence make it possible to suppose, that real MQW are not rectangular and even not symmetric. The study of nonrectangular well influence on MQW characteristics would make it possible to determine how prevent from this influence by means of some modification introduction into growth process. In this report we present analytical description of CVC, field dependence of responsivity and signal/noise ratio for nonrectangular MQW. Analytical results are compared with experimental data. The possible ways to compensate nonrectangular wells influence is considered.
机译:对于多个量子阱超晶格(MQW)的分析描述,例如,电流 - 电压特性(CVC),通常使用矩形和对称壁的良好模型。然而,来自分析依赖性的真实MQW的实验特征的偏差使得可能假设,真正的MQW不是矩形且甚至不是对称的。对非改良孔对MQW特性的影响将使通过对生长过程的一些修改引入来确定如何防止这种影响。在本报告中,我们呈现了CVC的分析描述,对响应度的响应性的场依赖性和非连接性MQW的信号/噪声比。将分析结果与实验数据进行比较。考虑了补偿非修复井影响的可能方法。

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