Negative infrared photoconductivity in CdS_(1-x)Se_x films

摘要

The negative infrared photoconductivity (NPH) has been observed for the first time in CdS_(1-x)Se_x films, in the wavelength region of 0.700/1.23 μm. at values of stimulating light intensity Φ = 100/400 Lk. electrical field E = 0.5/ 130 V/cm and temperature T = 265/310 K. It is established, that basic laws of NPH explains on the basis of two-barrier model and in the considered conditions a charge carriers, overcome a barrier by tunneling. A films of CdS_(1-x)Se_x can be used in IR engineering and ncgatronics.