首页> 外文会议>Conference on microscopy of semiconducting materials >Unified polarity analysis of <110> and <001> Sphalerite-type crystal samples using Bragg-line contrast rules
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Unified polarity analysis of <110> and <001> Sphalerite-type crystal samples using Bragg-line contrast rules

机译:使用Bragg-Line对比度规则<110>和<001> <001> <001型晶晶样品的统一极性分析

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The polarity of crystalline materials with sphalerite structure (Ⅲ-Ⅴ compound semiconductors, ZnSe, CdTe, ...) can be derived reliably from the analysis of Bragg-line contrast applying simple contrast rules. The procedure uses polarity-dependent dynamical electron scattering effects near <110> and <001> crystal projections. Using InP as an example, the rules and their applicability are demonstrated for a range of experimentally accessible sample thicknesses, and their validity is confirmed by the comparison of experimental and simulated convergent beam electron diffraction (CBED) patterns. The results show convincingly that the procedure can be applied to crystals with small and large atomic number differences, thus enabling a unified polarity analysis to be carried out.
机译:可以可靠地从采用简单对比度规则的布拉格线对比度来源地导出具有闪锌矿结构(Ⅲ-Ⅵ化合物半导体,ZnSe,CdTe,...)的结晶材料的极性。该方法使用靠近110>晶体突起的极性相关的动态电子散射效应。使用INP作为示例,规则及其适用性被证明一系列实验可接近的样品厚度,并且通过比较实验和模拟收敛光束电子衍射(CBE)图案来确认它们的有效性。结果表明,该程序可以应用于具有小而大的原子数差异的晶体,从而能够进行统一的极性分析。

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