Electron energy loss spectroscopy (EELS) is a technique with the ability to probe the electrical activity of extended defects in semiconductors. In a cold field emission gun scanning transmission electron microscope (FEG STEM) under carefully chosen experimental conditions it is possible to detect states due to extended defects in wide band gap materials and these can be compared directly with density functional theory (DFT) calculations of the energy loss. We show how the spectra acquired from dislocations in GaN and diamond are related to the results of the first principle calculations.
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