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Acousto-Optical Spectroscopy of Dislocations in Wide Band Gap Semiconductors

机译：宽带隙半导体中位错的声光谱研究

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B. K. Kardashev;
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1. Acousto-Optical Spectroscopy of Dislocations in Wide Band Gap Semiconductors [J] . B. K. Kardashev Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2003,第0期

机译：宽带隙半导体中位错的声光光谱学
2. Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors [J] . I. Yonenaga, Y.Ohno, T.Taishi, Physica, B. Condensed Matter . 2009,第23a24期

机译：宽带隙半导体中强度和位错迁移率的最新知识
3. High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors [J] . I. Yonenaga, H. Koizumi, Y. Ohno, Journal of Applied Physics . 2008,第9期

机译：宽带隙ZnO中的高温强度和位错迁移率：与各种半导体的比较
4. Acousto-Optical Spectroscopy of Dislocations in Wide Band Gap Semiconductors [C] . B. K. Kardashev International school on mechanical spectroscopy . 2003

机译：宽带间隙半导体位错的声光谱
5. Optical spectroscopy of wide-band-gap semiconductors: Raman and photoluminescence of gallium nitride, zinc oxide and their nanostructures . [D] . Wang, Dake. 2006

机译：宽带隙半导体的光谱学：氮化镓，氧化锌及其纳米结构的拉曼光谱和光致发光。
6. Benchmark Investigation of Band-Gap Tunability of Monolayer Semiconductors under Hydrostatic Pressure with Focus-On Antimony [O] . Xiangyu Dai, Zhengfang Qian, Qiaolu Lin, 2020

机译：浓度对锑静压压力下单层半导体带间隙可调性的基准调查
7. Detection of Optically Excited States in Wide-Band-Gap Semiconductors with Tunneling Spectroscopy [O] . Gregory S Rohrer, Dawn A. Bonnell, Roger H. French 2015

机译：用隧道光谱法检测宽带隙半导体中的光学激发态
8. Hyperfine Interactions in the Electron Paramagnetic Resonance Spectra of Point Defects in Wide-Band-Gap Semiconductors. [R] . Golden, E. M. 2014

机译：宽带隙半导体中点缺陷的电子顺磁共振谱中的超精细相互作用。

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