Low Temperature Wafer Bonding - A Useful Tool for Wafer Level Packaging of Sensors

摘要

In this work we investigate the low temperature (<200°C) wafer bonding using wet chemical activation and we demonstrate high bonding strength sufficient to achieve the transfer of a thin silicon film of thickness less than 400 nm on top of another silicon wafer using Spin-On-Glass (SOG) film as an intermediate layer. The process developed is the first critical step that can enable wafer level packaging of MEMS with electronic circuits.