Parametric studies of carbon nitride thin films deposited by reactive pulsed laser ablation

摘要

We report on parametric studies of CN{sub}x films deposited by excimer laser ablation of graphite targets in molecular nitrogen atmosphere as a function of gas pressure and laser fluence values. Substrates were Si <111> single crystals at room temperature. Deposition rates decrease with increasing nitrogen pressure (from 0.5 to 100 Pa). The N/C atomic ratio generally increases with increasing nitrogen pressure and laser fluence, N atoms are mainly bonded to C atoms in the sp{sup}2 and sp{sup}3 bonding states. At relatively high pressure (50 Pa) and laser fluences (16-32 J/cm{sup}2) about 40% of the C atoms and about 50% of the N atoms are bounded in the C-N single bonds, generally attributed to the β-C{sub}3N{sub}4 compound.