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CMP Processing Issues for MEMS Fabrication Technology

机译:MEMS制造技术的CMP处理问题

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摘要

A wide variety of MicroElectroMechanical Systems (MEMS) are fabricated using existing novel technologies. State-of-the art integrated circuit (IC) fabrication methods are used for the fabrication of these MEMS. The fabrication of these structures requires many process steps that include deposition, patterning, etching, and CMP. The use of CMP enables the fabrication of complex, multi-level MEMS. Similar to IC fabrication, there are concerns about non-uniformity, erosion and dishing after CMP, but because of the thickness of the materials, CMP processing issues are amplified. Unlike ICs, there is no transistor basic building block so processing must be technology specific and process development is driven by the device/system performance requirements, which are very specific to the application.
机译:使用现有的新技术制造各种微机电系统(MEMS)。最先进的集成电路(IC)制造方法用于制造这些MEMS。这些结构的制造需要许多处理步骤,包括沉积,图案化,蚀刻和CMP。使用CMP使得能够制造复杂的多级MEMS。类似于IC制造,涉及CMP后的不均匀性,腐蚀和凹陷,而是由于材料的厚度,CMP处理问题被放大。与IC不同,没有晶体管基本构建块,因此必须采用技术特定技术,流程开发由设备/系统性能要求驱动,这非常特定于应用程序。

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