DEVICE MODELS FOR SILICON-ON-INSULATOR (SOI) INSULATED-GATE PN-JUNCTION DEVICES FOR ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUIT DESIGN

摘要

This paper describes the dc characteristics of various SOI insulated-gate pn-junction devices, and also proposes equivalent circuit models for circuit simulations. Fundamental device models are investigated using a device simulator. It is clarified that device characteristics can be explained on the basis of pn junction, nMOSFET, and pMOSFET operations. The proposed equivalent circuit models of the devices utilize standard SPICE circuit elements. Equivalent circuit models are used to evaluate the performance of an electrostatic discharge (ESD) protection circuit.