Compact Equivalent-Circuit Model for Snap-Back Phenomena in Ultra-Thin SOI MOSFET's and Practical Guideline for ESD-Protection Device Design

摘要

This paper proposes a compact equivalent-circuit model for the snap-back phenomenon in ultra-thin SOI MOSFET's. The model can be used in simulations of I/O circuits with ESD-protection devices. The model is more simple than past models, but it successfully reproduces the snap-back response. With the aid of many simulations, we propose a　guideline for snap-back SOI MOSFET device design. Useful parameter-sensitivity　equations for device characteristics are given for practical device designs.