A Framework for Generic Physics Based Double-Gate MOSFET Modeling

摘要

This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to accommodate different device structures takes a much high precedence compared with conventional modeling approaches. In addition, detail device physics based on 2-D and even 3-D analysis at very small dimension have to be incorporate to describe the device operation accurately. A flexible quasi-Fermi potential core model is described to achieve both physical accuracy and extendibility.