The properties of shallow electron trap dopants in AgCI optical storage materials

摘要

Using a computer simulation. AgCI emulsions doped with [Fe(CN)_6]~(4-) complexes and a reference AgCI emulsion without dopants have been investigated at room temperature, and the free photoelectron decay time (FPT) was obtained. According to compare with the experimental results obtained by microwave absorption dielectric spectrum detection technology, the shallow electron traps (SETs) information was gotten. In this simulation, a model, which consists of a [Fe(CN)_6]~(4-) related SETs and intrinsic centers including two types of electron traps and a recombination center, is proposed. The model results in a set of differential equations that describe the kinetics of photographic generation, trapping, thermal detrapping and recombination processes. The EPT was simulated through solving these differential equations. Adjusting the simulation parameters of SETs to fit the experimental data, a number of important conclusions about SETs dopants were drawn from the simulation study.