Crystallization of Ge-doped AgInTeSb phase-change optical disk media

摘要

Due to germanium doping in the AgInTeSb film, Ag_2Te phase was formed at minor doping and disappeared when the germanium content was high, AgInFe_2 phase changed into AgIn_2 phase, and Ge_2Sb_2Te_5 new crystalline phase appeared. The crystallization temperature of AgInTeSbGe increased manifestly with Ge addition. A doping amount of 4.1 at.% germanium increases the reflectivity contrast to be greater than 30% almost in the whole visible region.