Crystallization of Ge_2Sb_2Te_5 phase-change optical disk media

摘要

In this paper, the crystallization behaviour of amorphous Ge_2Sb_2Te_5 thin films is investigated using differential scanning calorimetry), x-ray diffraction and optical transmissivity measurements. It is indicated that only the amorphous phase to face-centred-cubic phase transformation occurs during laser annealing of the normal phase-change structure, which is a benefit of raising the phase-change optical disk's carrier-to-noise ratio (CNR). For amorphous Ge_2Sb_2Te_5 thin films, the crystallization temperature is about 200 deg. C and the melting temperature is 546.87 deg. C.