ENHANCED PL OF HIGH DENSITY (≈ 4.7×10{sup}11/cm{sup}2) InAs QDs BY USING GRADED INTERFACE OF GaAs/AlAs/GaAs

摘要

We have achieved an enhanced PL of high density (≈ 4.7×10{sup}11/cm{sup}2) InAs QDs by using graded interface of GaAs/AlAs/GaAs. The graded interface applied for the purpose of improving surface state helps to obtain high intensity PL spectra of InAs QDs. With increasing the number of graded interface, the intensity of PL emitted from InAs QDs is increased. From the results, we conclude that the graded interface is a key point of fabricating devices, which have high optical properties.