Influence of Atom Diffusion Parameters on Ge-nanoisland Orientation on Si(111) at Initial Nucleation Stage

摘要

Reasons of three-bilayer Ge nano-islands nucleation on Si(111) surface at low deposition rates at the initial stages of wetting layer formation were investigated. Simulation of Ge epitaxial growth on atomically clean and flat Si(111) surface was carried out by 3D Monte Carlo model. Influence of different diffusion parameters on island orientation was investigated. New hypothesis on the basis of simulations and literature analysis provides an explanation for Ge-island height limitation by three-bilayer height at initial nucleation stages on Si(111) surface.