Single crystalline a-axis Mg doped ZnO thin films prepared by Sol-gel technique for Optoelectronics applications

摘要

Single crystalline a-axis Mg doped ZnO thin films (Mg_xZn_(1-x)O) were successfully prepared by sol-gel spin coating method using Zinc acetate, Magnesium acetate as precursors with ethanol as a solvent. The prepared solutions were used to deposit the films on silicon (100) substrate for different mole concentrations (x = 0.1 to 0.33). All deposited films were annealed at 450°C to get dense crystalline films. X-ray Diffractometer (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive Analysis by X-ray (EDAX), Fourier Transform Infrared Spectroscopy (FTIR), Ellipsometry and semiconductor characterization system with probe station were used to characterize the deposited films for structural, chemical, optical, mechanical and electrical properties. The intense absorption peak was observed in the IR spectra for all deposited films showing bond position of fundamental ZnO peak for all Mg mole concentrations. From the XRD spectra, it revealed that the deposited films were single crystalline and a-axis oriented. EDAX spectra clearly showed the peak of Mg along with Zn and O indicating the successful incorporation of Mg into the ZnO. The refractive index was successfully tailored from 1.6 to 1.11 corresponding to 0.1 to 0.33 Mg mole concentration. The refractive index was found to be decrease with an increase in Mg mole concentration. I-V characteristics shows decrease in current with increase in the Mg mole concentration. Significant effect was not observed on thickness of deposited films due to the varying Mg mole fraction. Through SEM image, it was noted that the uniform film of Mg doped ZnO was deposited on the silicon substrate. Our results explore the applicability of MgZnO as cladding layer material to form effective and efficient heterostructure with ZnO as an active layer for the optical wave-guide applications.