SINGLE CRYSTALLINE a-AXIS ZnO THIN FILMS DEPOSITEDBY SOL-GEL METHOD FOR OPTOELECTRONIC DEVICES

摘要

Undoped a-axis oriented single crystalline zinc oxide (ZnO) films were deposited by sol- gel dip-coating method. The films were characterized by X-ray diffraction (XRD) and ultraviolet visible (UV-VIS) absorbance spectra. The films of ZnO were deposited on amorphous microscopic glass substrate at various temperatures. The XRD showed that the ZnO film was crystallized with a hexagonal structure with a strong orientation in the (100) plane, which is exactly along the a-axis and beneffcial for the development of optoelectronic devices. The optical band gap energy found for this a-axis oriented ZnO film was 3.30 eV through UV-VIS absorbance spectra. The Fourier Transform Infrared Spectroscopy (FTIR) analysis was carried out by taking the IR absorbance spectra for ZnO film deposited on the silicon substrate at 450C. It showed that the strong ZnO stretching bond is present in the deposited film.