溶胶-凝胶法制备Y掺杂ZnO薄膜及其光电性能研究

摘要

The Y doped ZnO transparent conducting thin films were prepared on glass by sol-gel method. X-ray diffraction( XRD) showed that Y doped ZnO thin films had hexagonal wurtzite structure with a C-axis preferred orien tatioa The peak position of the (002) plane shifted to the low angle value with the increase of Y doping. From the transmittance spectrum, the average transmittance of Y doped ZnO film in the visible region (400~800nm) was be yond 85%, and the optical absorption edge obviously shifted to the shorter wavelength with increasing Y doping. So the film band gap energy can be adjusted by changing the Y doping concentration. The minimum resistivity of Y doped ZnO film is 3. 68 ×102 Ω ? Cm.%采用溶胶-凝胶法在玻璃衬底上制备了不同掺Y浓度的ZnO透明导电薄膜.X射线衍射(XRD)表明,所制备的Y掺杂ZnO透明导电薄膜为六角纤锌矿结构的多晶薄膜,且具有C轴择优取向.随着Y掺杂浓度的升高,(002)峰向低角度方向移动.UV透射曲线表明,薄膜在可见光区(400～800nm)的平均透过率超过85％,具有明显的紫外吸收边,通过改变Y的掺入浓度,可以使吸收边向短波方向移动,从而使薄膜的禁带宽度可调.制备的Y掺杂ZnO薄膜电阻率最小值为3.68×102Ω·cm.