Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions

摘要

The paper presents a detailed analysis of the conversion phenomena observed in trap-assisted low-frequency noise conversion in forced large-signal device operation. The discussion is based on a drift-diffusion physical model, with stationary and cyclostationary noise analysis capabilities. In particular, we show that in a semiconductor diode, traps located in a resistive area yield terminal fluctuations whose frequency conversion is milder than in the case of traps in the depletion region. This leads to a different frequency dependence for noise at the baseband or near the fundamental frequency.