Calculations concerning the electron transit time under the influence of the space charge for a plane parallel vacuum microelectronics diode

摘要

In this paper, the influence of the spacechange on the potential distribution, the electric field distribution, and the electron transit time is analyzed mathematically for a plane parallel vacuum microelectronics diode by using of the Poisson equation. The electron transit time formulae under considering the influence of the space charge is derived mathematically from its basic definition, and is also verified by using of the basic electricity principle as an example.