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Laser Based Assembly of Ultra Fine Pitch Bumped ICs For Chip-on-Chip Proximity Coupled Applications

机译:基于激光的超细间距凸块IC的组装,用于片上芯片的接近耦合应用

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This paper describes a process flow for creating ultra-fine-pitch solder interconnects between stacked die. The application for this die stack is Proximity Communication (PxC). Tight geometric control of both the bumping and assembly processes are required in all three dimensions, x-y-z, to enable efficient capacitance communication between the die. The test vehicle for this program consists of a bridged-stack design, where one chip is used as communication link (bridge) between two other die (island). The solder bumps perform several critical functions in this application: 1) provide for electrical transmission of power, ground, and low frequency signals between chips, 2) create precise x-y alignment between the stacked die which allows for good overlap of the non-bumped pads which are used for proximity coupled data transmission between die, and 3) provide for a narrow and tightly controlled standoff distance between stacked die to enable efficient capacitive coupling. The bumping process consisted of depositing an e-Ni/Au layer as the UBM (3 μm) on both the bridge and island dies, creating micro bumps of Sn (3 μm) on the bridge die, and creating a second set of flip chip sized bumps (100 μm SnAgCu) on the island die for assembly to a ceramic substrate. The bumped wafers were thinned to 150 μm, singulated, laser assembled together using the micro bumps to create a three chip unit, and then laser assembled to a ceramic substrate using the flip chip bumps. Assembly is accomplished by aligning the bumped bridge die to the corresponding unbumped island die and laser heating the micro bump area to reflow the Sn solder to form the fine pitch interconnect. The second assembly to the ceramic substrate is also accomplished using the laser heating process. This laser technology allows for highly localized heating, which allows for independent reflow and assembly of the two different solder bump regions, i.e. Sn micro-bumps and SnAgCu flip chip bumps.
机译:本文介绍了用于在堆叠管芯之间产生超细桨距焊料互连的过程流程。该模具堆栈的应用是接近通信(PXC)。在所有三个维度X-Y-Z,X-Y-Z,X-Y-Z的紧密几何控制都是需要的,以实现模具之间的有效电容通信。该程序的测试车辆由桥接堆叠设计组成,其中一个芯片用作另外两个模具(岛)之间的通信链路(桥)。焊料凸块在本申请中执行若干关键功能:1)提供电源,接地和芯片之间的低频信号的电气传输,2)在堆叠的芯片之间产生精确的XY对准,这允许非碰撞垫的良好重叠用于在管芯和3之​​间用于接近耦合数据传输的耦合数据传输,提供堆叠芯片之间的窄且紧密控制的支座距离,以实现有效的电容耦合。凸起过程包括将E-Ni / Au层沉积在桥和岛上的桥梁和岛上的UBM(3μm),在桥梁模具上产生SN(3μm)的微凸块,并产生第二组倒装芯片岛上的大小凸起(100μmsnagcu)模具用于组装到陶瓷基板。将凸块晶片薄于150μm,单独的激光器使用微凸块组装在一起,以使用微凸块来产生三个芯片单元,然后使用倒装芯片凸块组装到陶瓷基板上的激光。通过将凸起的桥梁管芯对准到相应的下突岛模具和激光加热微凸块区域来实现组装,以将SN焊料回流以形成细间距互连。还使用激光加热过程完成第二组件到陶瓷基板。这种激光技术允许高度局部加热,这允许两个不同的焊料凸块区域的独立回流和组装,即Sn微凸块和SnAGCU倒装芯片凸块。

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